MBE growth and properties of bulk BeCdSe alloys and digital (BeSe: CdSe)/ZnSe quantum wells

التفاصيل البيبلوغرافية
العنوان: MBE growth and properties of bulk BeCdSe alloys and digital (BeSe: CdSe)/ZnSe quantum wells
المؤلفون: Ivanov, S.V., Toropov, A.A., Shubina, T.V., Lebedev, A.V., Sorokin, S.V., Sitnikova, A.A., Kop'Ev, P.S., Reuscher, G., Keim, M., Bensing, F., Waag, A., Landwehr, G., Pozina, Galia, Bergman, Peder, Monemar, Bo
المصدر: Journal of Crystal Growth. 214:109-114
مصطلحات موضوعية: TECHNOLOGY, TEKNIKVETENSKAP
الوصف: We report for the first time on MBE growth, structural and optical properties of single layers, quantum well structures and short-period superlattices based on BexCd1-xSe ternary alloys on GaAs. Both the conventional MBE growth mode and the sub-monolayer digital alloying technique (SDA) have been employed for the fabrication of the structures. Compositional boundaries of an instability region 0.03 < x < 0.38, calculated in a regular solution approximation for the completely coherent system, agree well with available experimental data. A suppression of the phase separation in BeCdSe by elastic stress in the layer, accompanied by a strong reduction of the Cd incorporation coefficient has been found. Ultrathin 2.8 ML BeCdSe SDA QWs with x approx. 0.15 demonstrate about an order of magnitude increase in the PL intensity with respect to the pure CdSe one, probably resulting from an enhanced carrier localization efficiency. Eg as a function of the Be content reveals a strong bowing in optical data, which allows one to consider BeCdSe alloys with compositions nearly lattice-matched to GaAs as potential materials for the active region of blue-green lasers.
وصف الملف: print
URL الوصول: https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-47638
قاعدة البيانات: SwePub
الوصف
تدمد:00220248
18735002
DOI:10.1016/S0022-0248(00)00041-5