Academic Journal
Simulation and Design of InGaAsN-Based Heterojunction Bipolar Transistors for Complementary Low-Power Applications
| العنوان: | Simulation and Design of InGaAsN-Based Heterojunction Bipolar Transistors for Complementary Low-Power Applications |
|---|---|
| المساهمون: | PEARTON, S |
| المصدر: | Solid State Electronics; Other Information: Submitted to Solid State Electronics; PBD: 1 Aug 2000 |
| وصف الملف: | Medium: P; Size: 24 pages |
| URL الوصول: | http://www.osti.gov/scitech/servlets/purl/760008 |
| قاعدة البيانات: | SciTech Connect |
| DOI: | 10.1016/S0038-1101(00)00131-3 |
|---|