Growth in ultrahigh vacuum and structural characterization of FeSi sub 2 on Si(111)

التفاصيل البيبلوغرافية
العنوان: Growth in ultrahigh vacuum and structural characterization of FeSi sub 2 on Si(111)
المساهمون: Grimaldi, M [Univ. di Catania (Italy)]
المصدر: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States); 9:4; Conference: 18. annual conference on physics and chemistry of semiconductor interfaces, Long Beach, CA (United States), 29 Jan - 1 Feb 1991
وصف الملف: Medium: X; Size: Pages: 2433-2436
URL الوصول: http://www.osti.gov/scitech/biblio/7116104
قاعدة البيانات: SciTech Connect