Patent
Detector comprising a variable capacitance diode
| العنوان: | Detector comprising a variable capacitance diode |
|---|---|
| Patent Number: | 10147,824 |
| تاريخ النشر: | December 04, 2018 |
| Appl. No: | 15/124075 |
| Application Filed: | January 26, 2015 |
| مستخلص: | A capacitance diode or variable capacitance diode includes first and second electrodes and a layer configuration disposed in contact-making fashion between the two electrodes. The layer configuration has, one after the other in a direction from the first electrode towards the second electrode, a layer formed of a ferroelectric material and an electrically insulating layer formed of a dielectric material having electrically charged defects. A method for producing a capacitance diode or a variable capacitance diode, a storage device and a detector including a capacitance diode or a variable capacitance diode are also provided. |
| Inventors: | HELMHOLTZ-ZENTRUM DRESDEN-ROSSENDORF E.V. (Dresden, DE) |
| Assignees: | Helmholtz-Zentrum Dresden-Rossendorf e.V. (Dresden, DE) |
| Claim: | 1. A detector for detecting radiation, the detector, comprising: at least one variable capacitance diode as a detector element, the at least one variable capacitance diode including: a first electrode and a second electrode; and a layer configuration disposed in contact-making fashion between said first electrode and said second electrode; said layer configuration having, in succession in a direction from said first electrode to said second electrode, a layer made of a ferroelectric material and an electrically insulating layer made of a dielectric material, said layer made of said dielectric material having electrically charged impurities; and means for detecting a capacitance of said at least one variable capacitance diode and characterizing the radiation on a basis of the detected capacitance. |
| Claim: | 2. The detector according to claim 1 , wherein said layer configuration has, in succession in said direction from said first electrode to said second electrode, said layer made of said ferroelectric material, said layer made of said dielectric material and a layer made of a doped semiconductor material. |
| Claim: | 3. The detector according to claim 1 , wherein said layer made of said dielectric material has a thickness of at least 5 nm. |
| Claim: | 4. The detector according to claim 1 , wherein: said layer made of said ferroelectric material has a polarization surface charge density at an interface thereof in a polarized state, corresponding to a state after applying a coercivity field strength of said ferroelectric material over said layer made of said ferroelectric material; said layer made of said dielectric material has a volume charge density of electrically charged defects; and said layer made of said dielectric material has a thickness causing a product of said thickness and said volume charge density of said layer made of said dielectric material, in terms of magnitude, to at most equal said polarization surface charge density of said layer made of said ferroelectric material. |
| Claim: | 5. The detector according to claim 1 , wherein the radiation is particle radiation or electromagnetic radiation. |
| Claim: | 6. The detector according to claim 1 , wherein: the detector is configured to apply a switching voltage between said first electrode and said second electrode; and said switching voltage has a magnitude being at least so large that: a coercivity field strength of said ferroelectric material is exceeded in said layer made of said ferroelectric material, such that: said at least one capacitance diode can be put into a predetermined storage state with a defined capacitance characteristic by applying said switching voltage. |
| Claim: | 7. The detector according to claim 6 , wherein: said at least one capacitance diode has a capacitance-voltage characteristic with a minimum in said predetermined storage state; and the detector is embodied to characterize the radiation on a basis of a position of said minimum. |
| Patent References Cited: | 5524092 June 1996 Park 2007/0138522 June 2007 Kijima et al. 2008/0107885 May 2008 Alpay 2013/0026382 January 2013 Yao 2011129766 October 2011 |
| Other References: | Tang, M.H., et al., “Capacitance-voltage and retention characteristics of Pt/SrBi2Ta2O9/HfO2/Si structures with various buffer layer thickness”, Applied Physics Letters, May 29, 2009, vol. 94. cited by applicant You, T., et al., “Exploiting Memristive BiFeO3 Bilayer Structures for Compact Sequential Logics”, Advanced Functional Materials, Jun. 11, 2014, pp. 3357-3365, vol. 24, No. 22. cited by applicant Zheng, X.J., et al., “Evaluation of capacitance-voltage characteristic and memory window of metal-ferroelectric-insulator-silicon capacitors”, Applied Physics Letters, Nov. 24, 2008, vol. 93. cited by applicant |
| Primary Examiner: | Mehta, Ratisha |
| Attorney, Agent or Firm: | Greenberg, Laurence A. Stemer, Werner H. Locher, Ralph E. |
| رقم الانضمام: | edspgr.10147824 |
| قاعدة البيانات: | USPTO Patent Grants |
| الوصف غير متاح. |