Bismuth-substituted rare-earth iron garnet crystal film and optical isolator

التفاصيل البيبلوغرافية
العنوان: Bismuth-substituted rare-earth iron garnet crystal film and optical isolator
Patent Number: 9,322,111
تاريخ النشر: April 26, 2016
Appl. No: 13/884371
Application Filed: November 10, 2011
مستخلص: A bismuth-substituted rare-earth iron garnet crystal film (RIG) which has an insertion loss of less than 0.60 dB and which can be produced in a high yield, as well as an optical isolator, which is grown by liquid phase epitaxy on a non-magnetic garnet substrate represented by a chemical formula of Gd3(ScGa)5O12, wherein the bismuth-substituted rare-earth iron garnet crystal film is represented by a chemical formula of La3-x-yGdxBiyFe5O12 (provided that 0
Inventors: Oosumi, Shuuji (Tokyo, JP); Nomi, Yasutaka (Tokyo, JP); Nakamura, Nobuo (Tokyo, JP); Hatanaka, Hiroshi (Tokyo, JP); Kajigaya, Tomio (Tokyo, JP)
Assignees: SUMITOMO METAL MINING CO., LTD. (Tokyo, JP)
Claim: 1. A bismuth-substituted rare-earth iron garnet crystal film which is grown by liquid phase epitaxy on a non-magnetic garnet substrate represented by a chemical formula of Gd 3 (ScGa) 5 O 12 , wherein the bismuth-substituted rare-earth iron garnet crystal film is represented by a chemical formula of La 3-x-y Gd x Bi y Fe 5 O 12 (provided that 0
Claim: 2. An optical isolator comprising the bismuth-substituted rare-earth iron garnet crystal film according to claim 1 used as a Faraday rotator.
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Primary Examiner: Katz, Vera
Attorney, Agent or Firm: Kratz, Quintos & Hanson, LLP
رقم الانضمام: edspgr.09322111
قاعدة البيانات: USPTO Patent Grants