Patent
Solid state imaging device, with suppressed dark current, method of manufacturing, and imaging apparatus
| العنوان: | Solid state imaging device, with suppressed dark current, method of manufacturing, and imaging apparatus |
|---|---|
| Patent Number: | 8,946,840 |
| تاريخ النشر: | February 03, 2015 |
| Appl. No: | 12/977766 |
| Application Filed: | December 23, 2010 |
| مستخلص: | A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section. |
| Inventors: | Oshiyama, Itaru (Kanagawa, JP); Ando, Takashi (Kanagawa, JP); Hiyama, Susumu (Kanagawa, JP); Yamaguchi, Tetsuji (Kanagawa, JP); Ohgishi, Yuko (Tokyo, JP); Ikeda, Harumi (Kanagawa, JP) |
| Assignees: | Sony Corporation (JP) |
| Claim: | 1. A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light and a peripheral circuit section at a side portion of the light sensing section, comprising: an insulating layer formed on a light receiving surface of the light sensing section; a hole accumulation layer at the light receiving surface of the light sensing section; a first layer including at least one of an oxide, a nitride, and an oxynitride on the insulating layer, the first layer having an upper surface that is furthest from the light sensing section and the peripheral circuit section, the upper surface having a first upper surface located under an entire length of the color filter and a second upper surface, and the first and second upper surfaces having different heights such that a distance of the second upper surface from an upper surface of the peripheral circuit section is greater than a distance of the first upper surface from an upper surface of the hole accumulation layer; and a second layer between the peripheral circuit section and the first layer. |
| Claim: | 2. The solid state imaging device of claim 1 , wherein said first layer is made from at least one material selected from the group consisting of hafnium oxide (HfO 2) layer, a zirconium oxide (ZrO 2) layer, a tantalum oxide (Ta 2 O 5) layer, or a titanium oxide (TiO 2) layer, a lanthanum oxide (La 2 O 3), a praseodymium oxide (Pr 2 O 3), a cerium oxide (CeO 2), a neodymium oxide (Nd 2 O 3), a promethium oxide (Pm 2 O 3), an europium oxide (Eu 2 O 3), a gadolinium oxide (Gd 2 O 3), a terbium oxide (Tb 2 O 3), a dysprosium oxide (Dy 2 O 3), a holmium oxide (Ho 2 O 3), an erbium oxide (Er 2 O 3), a thulium oxide (Tm 2 O 3), an ytterbium oxide (Yb 2 O 3), a lutetium oxide (Lu 2 O 3), an yttrium oxide (Y 2 O 3), a hafnium nitride layer, an aluminum nitride layer, a hafnium oxynitride layer, and an aluminum oxynitride layer. |
| Claim: | 3. The solid state imaging device according to claim 2 , wherein the first layer is a layer having negative electric charges, the first layer being a hafnium oxide layer, an aluminum oxide layer, a zirconium oxide layer, a tantalum oxide layer, or a titanium oxide layer. |
| Claim: | 4. The solid state imaging device of claim 2 , further comprising: a third layer on said first layer, the third layer being made from at least one material selected from the group consisting of a hafnium oxide (HfO 2) layer, a tantalum oxide (Ta 2 O 5) layer, or a titanium oxide (TiO 2) layer, a lanthanum oxide (La 2 O 3), a praseodymium oxide (Pr 2 O 3), a cerium oxide (CeO 2), a neodymium oxide (Nd 2 O 3), a promethium oxide (Pm 2 O 3), an europium oxide (Eu 2 O 3), a gadolinium oxide (Gd 2 O 3), a terbium oxide (Tb 2 O 3), a dysprosium oxide (Dy 2 O 3), a holmium oxide (Ho 2 O 3), an erbium oxide (Er 2 O 3), a thulium oxide (Tm 2 O 3), an ytterbium oxide (Yb 2 O 3), a lutetium oxide (Lu 2 O 3), an yttrium oxide (Y 2 O 3), a hafnium nitride layer, an aluminum nitride layer, a hafnium oxynitride layer, and an aluminum oxynitride layer. |
| Claim: | 5. The solid state imaging device according to claim 1 , wherein the insulating layer is of a silicon oxide layer. |
| Claim: | 6. The solid state imaging device according to claim 1 , further comprising: a plurality of pixel sections each having a light sensing section, which converts incident light into an electric signal; and a wiring layer provided on a surface of a semiconductor substrate formed with the pixel sections, wherein, the solid state imaging device receives light, which is incident from a side opposite a surface on which the wiring layer is formed, in the light sensing section. |
| Claim: | 7. The solid state imaging device according to claim 1 , wherein the first layer is formed of a conductive material capable of transmitting the incident light therethrough. |
| Claim: | 8. The solid state imaging device of claim 7 , wherein the first layer is made of at least one material selected from the group consisting of indium tin oxide, indium zinc oxide, indium oxide, tin oxide, and a gallium zinc oxide. |
| Claim: | 9. The solid state imaging device of claim 1 , wherein said first layer is made of silicon nitride. |
| Claim: | 10. The solid state imaging device of claim 1 , wherein said second layer is a light-shielding film. |
| Claim: | 11. The solid state imaging device of claim 10 , wherein the light-shielding film is formed over the peripheral circuit section and a portion of the light sensing section. |
| Claim: | 12. The solid state imaging device of claim 1 , wherein said second layer is an insulating layer. |
| Claim: | 13. The solid state imaging device according to claim 12 , wherein the insulating layer between the peripheral circuit section and the first layer is configured to have a laminated structure including one or a plurality of kinds of layers of a silicon oxide layer, a silicon nitride layer, and a silicon oxynitride layer. |
| Claim: | 14. The solid state imaging device of claim 1 , wherein said second layer comprises silicon nitride. |
| Claim: | 15. An imaging apparatus comprising: a condensing optical section that condenses incident light; a solid state imaging device that receives the incident light condensed in the condensing optical section and performs photoelectric conversion of the received light; and a signal processing section that processes signal charges photoelectrically converted, wherein, the solid state imaging device includes: a light sensing section that performs photoelectric conversion of incident light and a peripheral circuit section at a side portion of the light sensing section; an insulating layer formed on a light receiving surface of the light sensing section; a hole accumulation layer at the light receiving surface of the light sensing section; a first layer including at least one of an oxide, a nitride, and an oxynitride on the insulating layer, the first layer having an upper surface that is furthest from the light sensing section and the peripheral circuit section, the upper surface having a first upper surface located under an entire length of the color filter and a second upper surface, and the first and second upper surfaces having different heights such that a distance of the second upper surface from an upper surface of the peripheral circuit section is greater than a distance of the first upper surface from an upper surface of the hole accumulation layer; and a second layer between the peripheral circuit section and the first layer. |
| Claim: | 16. The imaging apparatus of claim 15 , further comprising: a second layer between the peripheral circuit section and the first layer such that the distance of an upper surface of the first layer from the surface of the peripheral circuit section is greater than the distance of the upper surface of the first layer from a surface of the light sensing section. |
| Claim: | 17. The imaging apparatus of claim 16 , wherein the second layer comprises silicon nitride. |
| Claim: | 18. The imaging apparatus of claim 15 , wherein said first layer comprises at least one material selected from the group consisting of hafnium oxide (HfO 2) layer, a tantalum oxide (Ta 2 O 5) layer, or a titanium oxide (TiO 2) layer, a lanthanum oxide (La 2 O 3), a praseodymium oxide (Pr 2 O 3), a cerium oxide (CeO 2), a neodymium oxide (Nd 2 O 3), a promethium oxide (Pm 2 O 3), an europium oxide (Eu 2 O 3), a gadolinium oxide (Gd 2 O 3), a terbium oxide (Tb 2 O 3), a dysprosium oxide (Dy 2 O 3), a holmium oxide (Ho 2 O 3), an erbium oxide (Er 2 O 3), a thulium oxide (Tm 2 O 3), an ytterbium oxide (Yb 2 O 3), a lutetium oxide (Lu 2 O 3), an yttrium oxide (Y 2 O 3), a hafnium nitride layer, an aluminum nitride layer, a hafnium oxynitride layer, and an aluminum oxynitride layer. |
| Current U.S. Class: | 257/432 |
| Patent References Cited: | 6147390 November 2000 Nakano et al. 2002/0195628 December 2002 Yamada 2005/0167734 August 2005 She et al. 2006/0033827 February 2006 Kanbe et al. 2006/0187327 August 2006 Mabuchi et al. 2006/0244088 November 2006 Inagaki et al. 2007/0034981 February 2007 Saito 2007/0210395 September 2007 Maruyama et al. 01-256168 October 1989 2005-093897 April 2005 2006-269789 October 2006 2006-270292 October 2006 2007-088305 April 2007 |
| Other References: | Japanese Office Action issued on Feb. 8, 2011 in connection with JP counterpart application No. 2007-265287. cited by applicant Official Action (with English translation) for Chinese Patent Application No. 201110304563.6 mailed Jun. 27, 2013, 18 pages. cited by applicant Official Action (with English translation) for Korean Patent Application No. 10-2009-7023252 mailed Apr. 28, 2014, 8 pages. cited by applicant Official Action (with English translation) for Korean Patent Application No. 10-2014-7021003 mailed Oct. 22, 2014, 13 pages. cited by applicant Official Action (with English translation) for Korean Patent Application No. 10-2008-0099843 mailed Nov. 25, 2014, 14 pages. cited by applicant |
| Primary Examiner: | Ahmed, Selim |
| Attorney, Agent or Firm: | Sheridan Ross P.C. |
| رقم الانضمام: | edspgr.08946840 |
| قاعدة البيانات: | USPTO Patent Grants |
| الوصف غير متاح. |