Patent
Light emitting diode with three-dimensional nano-structures
| العنوان: | Light emitting diode with three-dimensional nano-structures |
|---|---|
| Patent Number: | 8,629,424 |
| تاريخ النشر: | January 14, 2014 |
| Appl. No: | 13/479227 |
| Application Filed: | May 23, 2012 |
| مستخلص: | A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and the light emitting surface, and a cross section of each of the three-dimensional nano-structures is M-shaped. |
| Inventors: | Zhu, Zhen-Dong (Beijing, CN); Li, Qun-Qing (Beijing, CN); Zhang, Li-Hui (Beijing, CN); Chen, Mo (Beijing, CN); Fan, Shou-Shan (Beijing, CN) |
| Assignees: | Tsinghua University (Beijing, CN), Hon Hai Precision Industry Co., Ltd. (New Taipei, TW) |
| Claim: | 1. A light emitting diode, comprising: a substrate; a first semiconductor layer having a first surface contacting the substrate and a second surface opposite to the first surface; an active layer stacked on the second surface of the first semiconductor layer; a second semiconductor layer stacked on the active layer and having a light emitting surface away from the active layer; a first electrode electrically connected with the first semiconductor layer; a second electrode electrically connected with the second semiconductor layer; and a plurality of three-dimensional nano-structures located on the second surface of the first semiconductor layer and on the light emitting surface, wherein each of the plurality of three-dimensional nano-structures has a first peak and a second peak aligned side by side, a first groove is defined between the first peak and the second peak, a second groove is defined between each two adjacent three-dimensional nano-structures of the plurality of three-dimensional nano-structures, and a depth of the first groove is less than a depth of the second groove. |
| Claim: | 2. The light emitting diode of claim 1 , wherein the each of the plurality of three-dimensional nano-structures is a bar-shaped protruding structure extending along a straight line, a curve line, or a polygonal line. |
| Claim: | 3. The light emitting diode of claim 1 , wherein a cross-section of the each of the plurality of three-dimensional nano-structures is M-shaped. |
| Claim: | 4. The three-dimensional nano-structure array of claim 1 , wherein the first peak comprises a first surface and a second surface intersecting each other to form a first include angle, the second peak comprises a third surface and a fourth surface intersecting each other to form a second include angle, and both the first include angle and the second include angle range from about 30 degrees to about 90 degrees. |
| Claim: | 5. The light emitting diode of claim 4 , wherein a cross-section of the first peak has a shape of a trapezoid or a triangle, and a cross-section of the second peak has a shape of a trapezoid or a triangle. |
| Claim: | 6. The light emitting diode of claim 1 , wherein a surface of the active layer is engaged with the plurality of three-dimensional nano-structures located on the first semiconductor layer. |
| Claim: | 7. The light emitting diode of claim 1 , wherein a depth of the first groove ranges from about 30 nanometers to about 120 nanometers, and a depth of the second groove ranges from about 100 nanometers to about 200 nanometers. |
| Claim: | 8. The light emitting diode of claim 1 , wherein the plurality of three-dimensional nano-structures is aligned side by side and extends to form a plurality of concentric circles or concentric rectangles. |
| Claim: | 9. The light emitting diode of claim 1 , wherein the plurality of the three-dimensional nano-structures is periodically aligned, and a period of the plurality of the three-dimensional nano-structures ranges from about 100 nanometers to about 500 nanometers. |
| Claim: | 10. The light emitting diode of claim 1 , wherein a distance between each two adjacent three-dimensional nano-structures of the plurality of three-dimensional nanostructures ranges from about 0 nanometers to about 200 nanometers. |
| Claim: | 11. The light emitting diode of claim 1 , wherein a width of the plurality of three-dimensional nano-structures ranges from about 100 nanometers to about 300 nanometers. |
| Claim: | 12. The light emitting diode of claim 1 , wherein a surface of the first semiconductor layer away from the substrate comprises a first region and a second region, the second semiconductor layer and the active layer are located on the first region, the second region is exposed from the second semiconductor layer and the active layer, and the first electrode is located on the second region. |
| Claim: | 13. The light emitting diode of claim 1 , further comprising a reflector located on a surface of the substrate away from the first semiconductor layer. |
| Current U.S. Class: | 257/13 |
| Patent References Cited: | 6313397 November 2001 Washio et al. 6825408 November 2004 Nagano et al. 8035113 October 2011 Moustakas et al. 8288195 October 2012 Wang et al. 2007/0126013 June 2007 Kim et al. 2008/0237616 October 2008 Hatakoshi et al. 2013/0140595 June 2013 Zhu et al. |
| Primary Examiner: | Jahan, Bilkis |
| Attorney, Agent or Firm: | Altis Law Group, Inc. |
| رقم الانضمام: | edspgr.08629424 |
| قاعدة البيانات: | USPTO Patent Grants |
| الوصف غير متاح. |