Patent
Group III nitride semiconductor light-emitting device and production method therefor
| العنوان: | Group III nitride semiconductor light-emitting device and production method therefor |
|---|---|
| Patent Number: | 8,309,381 |
| تاريخ النشر: | November 13, 2012 |
| Appl. No: | 12/585994 |
| Application Filed: | September 30, 2009 |
| مستخلص: | A method for producing a light-emitting device including a growth substrate made of Group III nitride semiconductor, and a Group III nitride semiconductor layer stacked on the top surface of the growth substrate, includes forming, between the growth substrate and the semiconductor layer, a stopper layer exhibiting resistance to a wet etchant, and wet-etching the bottom surface of the growth substrate until the stopper layer is exposed. |
| Inventors: | Moriyama, Miki (Aichi, JP); Goshonoo, Koichi (Aichi, JP) |
| Assignees: | Toyoda Gosei Co., Ltd. (Nishikasugai-gun, Aichi-ken, JP) |
| Claim: | 1. A method for producing a light-emitting device comprising a growth substrate made of Group III nitride semiconductor, and a Group III nitride semiconductor layer stacked on the top surface of the growth substrate, the method comprising: forming, between the growth substrate and the semiconductor layer, a stopper layer exhibiting resistance to a wet etchant; and wet-etching the bottom surface of the growth substrate until the stopper layer is exposed, wherein the growth substrate comprises GaN, wherein the stopper layer comprises AlGaN including an Al compositional proportion in a range from 5% to 40% and including a band gap greater than a band gap of a material of the growth substrate, wherein the growth substrate comprises a c-plane substrate, and the top surface and the bottom surface of the substrate comprise a Ga-polar surface and an N-polar surface, respectively, and wherein the wet-etching of the bottom surface comprises photo-enhanced chemical reaction (PEC) etching employing light including a wavelength corresponding to an energy which is greater than a band gap of the material of the substrate, and less than a band gap of a material of the stopper layer. |
| Claim: | 2. A method for producing a light-emitting device according to claim 1 , wherein the wet etching is carried out for providing, at a center portion of the bottom surface of the growth substrate, a cavity having a side surface perpendicular to or inclined with respect to the top or bottom surface of the growth substrate, so that the stopper layer is exposed to the space defined by the cavity. |
| Current U.S. Class: | 438/42 |
| Patent References Cited: | 3959038 May 1976 Gutierrez et al. 5773369 June 1998 Hu et al. 6060402 May 2000 Hanson 6614821 September 2003 Jikutani et al. 2003/0116774 June 2003 Yamamoto et al. 2006/0255341 November 2006 Pinnington et al. 2002-280674 September 2002 2002-353144 December 2002 2003-229645 August 2003 2004-55854 February 2004 2007-235122 September 2007 2008-227540 September 2008 |
| Other References: | Trichas et al., Selective photochemical etching of GaN films and laser lift-off for microcavity fabrication, Sep. 18, 2008, phys. stat. sol. (a) 205, No. 11, 2509-2512. cited by examiner Japanese Office Action dated May 8, 2012 with a partial English translation. cited by other |
| Assistant Examiner: | Carpenter, Robert |
| Primary Examiner: | Such, Matthew W |
| Attorney, Agent or Firm: | McGinn IP Law Group, PLLC |
| رقم الانضمام: | edspgr.08309381 |
| قاعدة البيانات: | USPTO Patent Grants |
| الوصف غير متاح. |