Patent
Formation of deep hollow areas and use thereof in the production of an optical recording medium
| العنوان: | Formation of deep hollow areas and use thereof in the production of an optical recording medium |
|---|---|
| Patent Number: | 8,263,317 |
| تاريخ النشر: | September 11, 2012 |
| Appl. No: | 12/312925 |
| Application Filed: | December 04, 2007 |
| مستخلص: | At least one hollow zone is formed in a stack of at least one upper layer and one lower layer. The upper layer is patterned to form at least a first hollow region passing through said upper layer. The first hollow region is extended by a second hollow region formed in the lower layer by etching through an etching mask formed on the patterned upper layer. The etching mask is formed by a resin layer, positively photosensitive to an optic radiation of a predetermined wavelength, exposed to the said optic radiation through the stack and developed. The lower and upper layers of the stack are respectively transparent and opaque to said predetermined wavelength so that the patterned upper layer acts as exposure mask for the resin layer. |
| Inventors: | Fargeix, Alain (Meylan, FR); Martin, Brigitte (Saint-Egrève, FR) |
| Assignees: | Commissariat a l'Energie Atomique (Paris, FR) |
| Claim: | 1. A method for forming at least one hollow zone in a stack of at least one upper layer and one lower layer, comprising the following successive steps: patterning of the upper layer to form at least a first hollow region passing through the upper layer, forming an etching mask on the patterned upper layer, consisting of: depositing a layer of a positive acting photosensitive resin and exposing it to an optic radiation of a predetermined first wavelength, on the patterned upper layer, the lower and upper layers of the stack being respectively transparent and opaque to the predetermined first wavelength, in exposing the positive acting photosensitive resin layer to the optic radiation through the stack, developing the positive acting photosensitive resin layer, etching the lower layer through the etching mask to form at least a second hollow region extending the first hollow region, and removing the etching mask, wherein, before the step of patterning the upper layer, the upper layer is formed of a material able to change phase or to change state, due to the action of heating caused by an optic radiation of a predetermined second wavelength different from the first wavelength. |
| Claim: | 2. The method according to claim 1 , wherein the first hollow region is formed by exposing at least one area of the upper layer to an optic radiation of the second wavelength, from the free surface of the upper layer, and by removing the exposed area. |
| Claim: | 3. The method according to claim 1 , wherein the material of the upper layer is selected from the group consisting of thermodynamically stable sub-stoichiometric oxides, thermodynamically unstable super-stoichiometric oxides and phase-change materials. |
| Claim: | 4. The method according to claim 1 , wherein the second wavelength is 405 nm. |
| Claim: | 5. The method according to claim 1 , wherein the first wavelength is 193 nm. |
| Claim: | 6. The method according to claim 1 , wherein the stack comprises a substrate transparent to the first wavelength. |
| Claim: | 7. The method according to claim 6 , wherein the substrate constitutes the lower layer. |
| Claim: | 8. The method according to claim 7 , wherein the substrate is made from silicon oxide, alumina, zircon, sapphire or quartz. |
| Claim: | 9. The method according to claim 6 , wherein the lower layer is arranged between the upper layer and the substrate. |
| Claim: | 10. The method according to claim 9 , wherein the lower layer is a thin layer of alumina or of a mixture of zinc sulfide and silicon oxide or silicon nitride. |
| Claim: | 11. The method according to claim 9 , wherein an additional layer, transparent to the first wavelength and insensitive to etching of the lower layer, is arranged between the lower layer and the substrate. |
| Claim: | 12. A method for manufacturing an optic recording medium in which at least one hollow zone is formed in a stack of at least one upper layer and one lower layer, the method comprising the following successive steps: patterning of the upper layer to form at least a first hollow region passing through the upper layer, forming an etching mask on the patterned upper layer, consisting of: depositing a layer of a positive acting photosensitive resin and exposing it to an optic radiation of a predetermined first wavelength, on the patterned upper layer, the lower and upper layers of the stack being respectively transparent and opaque to the predetermined first wavelength, in exposing the positive acting photosensitive resin layer to the optic radiation through the stack, developing the resin positive acting photosensitive layer, etching the lower layer through the etching mask to form at least a second hollow region extending the first hollow region, and removing the etching mask, wherein, before the step of patterning the upper layer, the upper layer is formed of a material able to change phase or to change state, due to the action of heating caused by an optic radiation of a predetermined second wavelength different from the first wavelength. |
| Current U.S. Class: | 430/321 |
| Patent References Cited: | 5501926 March 1996 Cheng et al. 6242162 June 2001 Ro et al. 7955786 June 2011 Sumioka 2004/0209199 October 2004 Kishima et al. 2004/0241589 December 2004 Ito et al. 2005/0045587 March 2005 Kawaguchi et al. 2005/0063289 March 2005 Tomiyama et al. 2005/0106508 May 2005 Shintani et al. 2006/0110568 May 2006 Edwards 2007/0217322 September 2007 Hanaoka et al. 19938072 March 2000 0 596 439 May 1994 1492102 December 2004 1691362 August 2006 05-323568 December 1993 06-051489 February 1994 2005-343115 December 2005 WO 2005/101398 October 2005 2006/045332 May 2006 |
| Other References: | “Single Level, multi material bubble domain”, IBM Tech Discl. vol. 21(3) pp. 1287-1288 (Aug. 1978). cited by examiner |
| Primary Examiner: | Angebranndt, Martin |
| Attorney, Agent or Firm: | Oliff & Berridge, PLC |
| رقم الانضمام: | edspgr.08263317 |
| قاعدة البيانات: | USPTO Patent Grants |
| الوصف غير متاح. |