Patent
Optoelectronic memory device and method for manufacturing and measuring the same
| العنوان: | Optoelectronic memory device and method for manufacturing and measuring the same |
|---|---|
| Patent Number: | 8,178,866 |
| تاريخ النشر: | May 15, 2012 |
| Appl. No: | 12/484606 |
| Application Filed: | June 15, 2009 |
| مستخلص: | The present invention provides an optoelectronic memory device, the method for manufacturing and evaluating the same. The optoelectronic memory device according to the present invention includes a substrate, an insulation layer, an active layer, source electrode and drain electrode. The substrate includes a gate, and the insulation layer is formed on the substrate. The active layer is formed on the insulation layer, and more particularly, the active layer is formed of a composite material comprising conjugated conductive polymers and quantum dots. Moreover, both of the source and the drain are formed on the insulation layer, and electrically connected to the active layer. |
| Inventors: | Wei, Kung-Hwa (HsinChu, TW); Sheu, Jeng-Tzong (HsinChu, TW); Chen, Chen-Chia (Changhua County, TW); Chiu, Mao-Yuan (Hualien County, TW) |
| Assignees: | National Chiao Tung University (Hsin-Chu, TW) |
| Claim: | 1. An optoelectronic memory device comprising: a substrate, which includes a gate electrode; an insulation layer, which is formed above the substrate; an active layer formed above the insulation layer, wherein the active layer is formed by a composite material which includes a conjugated polymer material and a quantum dot material; a source electrode formed above insulation layer and the source electrode is electrically connected to the active layer; and a drain electrode formed above the insulation layer and the drain electrode is electrically connected to the active layer, wherein the entire gate electrode is located directly below the active layer and the insulation layer. |
| Claim: | 2. The optoelectronic memory device of claim 1 , wherein the substrate can be substrate, glass substrate or flexible substrate. |
| Claim: | 3. The optoelectronic memory device of claim 1 , wherein the insulation layer is made up of silicon dioxide or silicon nitride. |
| Claim: | 4. The optoelectronic memory device of claim 1 , wherein the composite material uses trichloro methane as solvent. |
| Claim: | 5. The optoelectronic memory device of claim 1 , wherein the conjugated polymer material includes polythiophene (P3HT). |
| Claim: | 6. The optoelectronic memory device of claim 1 , wherein the quantum dot material includes metal quantum dot or semiconductor quantum dot. |
| Claim: | 7. The optoelectronic memory device of claim 6 , wherein the semiconductor quantum dot is CdSe quantum dot with a diameter in the range of 2 nm to 10 nm. |
| Claim: | 8. The optoelectronic memory device of claim 1 , wherein the source electrode and the drain electrode are all of finger shape electrodes. |
| Claim: | 9. The optoelectronic memory device of claim 1 , wherein the entire gate electrode is located directly below a top of the substrate. |
| Claim: | 10. An optoelectronic memory device comprising: a substrate, which includes a gate electrode; an insulation layer, which is formed above the substrate; an active layer formed above the insulation layer, wherein the active layer is formed by a composite material which includes a conjugated polymer material and a quantum dot material; a source electrode formed above insulation layer and the source electrode is electrically connected to the active layer; and a drain electrode formed above the insulation layer and the drain electrode is electrically connected to the active layer, wherein the insulation layer includes: a silicon dioxide layer formed above the substrate; and a Hexamethyldisilazone (HMDS) layer formed above the silicon dioxide layer; wherein the active layer, the source electrode and the drain electrode are all formed above the HMDS layer. |
| Current U.S. Class: | 257/40 |
| Patent References Cited: | 2005/0133087 June 2005 Alivisatos et al. 2005/0285161 December 2005 Kang et al. 2009/0101206 April 2009 Diklich |
| Primary Examiner: | Huynh, Andy |
| Attorney, Agent or Firm: | Birch, Stewart, Kolasch & Birch, LLP |
| رقم الانضمام: | edspgr.08178866 |
| قاعدة البيانات: | USPTO Patent Grants |
| الوصف غير متاح. |