Patent
أعرض في EDS

Nanocrystal structures

التفاصيل البيبلوغرافية
العنوان: Nanocrystal structures
Patent Number: 8,121,162
تاريخ النشر: February 21, 2012
Appl. No: 12/275800
Application Filed: November 21, 2008
مستخلص: A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II-VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.
Inventors: Eisler, Hans J. (Stoneham, MA, US); Sundar, Vikram C. (Stoneham, MA, US); Walsh, Michael E. (Everett, MA, US); Klimov, Victor I. (Los Alamos, NM, US); Bawendi, Moungi G. (Cambridge, MA, US); Smith, Henry I. (Sudbury, MA, US)
Assignees: Massachusetts Institute of Technology (Cambridge, MA, US)
Claim: 1. A method of forming a laser comprising: selecting a semiconductor nanocrystal having a diameter and a composition; and placing the semiconductor nanocrystal on a grating arranged to provide feedback.
Claim: 2. The method of claim 1 , wherein the diameter of the nanocrystal is selected to emit at a particular wavelength to produce a laser having a particular output energy.
Claim: 3. The method of claim 1 , wherein the composition of the nanocrystal is selected to emit at a particular wavelength to produce a laser having a particular output energy.
Claim: 4. The method of claim 3 , wherein the diameter of the nanocrystal is selected to emit at a particular wavelength to produce a laser having a particular output energy.
Claim: 5. The method of claim 1 , wherein the grating is selected to have a periodicity selected to produce a laser having a particular output energy.
Claim: 6. The method of claim 1 , further comprising forming a layer including the semiconductor nanocrystal on a surface of the grating.
Claim: 7. The method of claim 1 , further comprising forming a layer including a monodisperse population of semiconductor nanocrystals on a surface of the grating.
Claim: 8. The method of claim 7 , wherein the layer includes greater than 5% by volume of semiconductor nanocrystals.
Claim: 9. The method of claim 1 , wherein the semiconductor nanocrystal includes a plurality of semiconductor nanocrystals, wherein the plurality of semiconductor nanocrystals include a Group II-VI compound, and wherein the plurality of semiconductor nanocrystals are distributed in a metal oxide matrix.
Current U.S. Class: 372/4/301
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Assistant Examiner: Prasad, Neil
Primary Examiner: Picardat, Kevin M
Attorney, Agent or Firm: Steptoe & Johnson LLP
رقم الانضمام: edspgr.08121162
قاعدة البيانات: USPTO Patent Grants
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