Photovoltaic module and the use thereof

التفاصيل البيبلوغرافية
العنوان: Photovoltaic module and the use thereof
Patent Number: 7,977,567
تاريخ النشر: July 12, 2011
Appl. No: 12/467498
Application Filed: May 18, 2009
مستخلص: The present invention relates to a photovoltaic module, comprising at least two component cell groups (SCA) which are connected to each other and disposed on an electrically insulating basic body, which groups comprise respectively one solar cell which is applied on a thermally and electrically conductive carrier and a bypass diode which is applied at a spacing thereto, and which are contacted with each other via an electrical conductor, the bypass diode having a polarity which is inverse to the solar cell and the solar cell and the bypass diode being applied on the conductive carrier via a conductive connecting layer.
Inventors: Bett, Andreas (Freiburg, DE); Jaus, Joachim (Freiburg, DE)
Assignees: Fraunhofer-Gesellschaft zur Forderung Angewandten Forschung E.V. (Munich, DE)
Claim: 1. A photovoltaic module, comprising at least two component cell groups (SCA) which are connected to each other and disposed on an electrically insulating basic body, wherein each group comprises respectively one III-V semiconductor solar cell which is applied on a thermally and electrically conductive carrier and a pn-semiconductor bypass diode made of silicon which is applied at a spacing thereto, and wherein the solar cell is contacted with the bypass diode via an electrical conductor, wherein the bypass diode has a polarity which is inverse to the solar cell and the solar cell and the bypass diode are applied on the conductive carrier via a conductive connecting layer, and wherein the connection of at least two SCAs is effected by a conductor which leads from the bypass diode of the first SCA to the conductive carrier of the second SCA.
Claim: 2. The photovoltaic module according to claim 1 , wherein the electrically conductive carrier of the SCA is a planar carrier made of copper, an alloy containing copper, zinc-plated steel and/or aluminum.
Claim: 3. The photovoltaic module according to claim 2 , wherein the conductive carrier has a thickness of 20 to 1000 μm.
Claim: 4. The photovoltaic module according to claim 1 , wherein the conductive connecting layer is formed from a solder and/or conductive adhesive.
Claim: 5. The photovoltaic module according to claim 1 , wherein a gold, nickel, titanium and/or palladium layer is applied on the conductive carrier, at least in the region of the bypass diode and/or of the solar cell.
Claim: 6. The photovoltaic module according to claim 1 , wherein the solar cell is a monolithic solar cell.
Claim: 7. The photovoltaic module according to claim 1 , wherein the bypass diode is a planar pn-semiconductor diode.
Claim: 8. The photovoltaic module according to claim 1 , wherein the surface of the diode is a gold, nickel, silver, titanium, palladium and/or aluminium surface.
Claim: 9. The photovoltaic module according to claim 1 , wherein the conductor which connects the solar cell and the bypass diode is a wire made of gold, aluminium or copper.
Claim: 10. The photovoltaic module according to claim 1 , wherein the conductor is a wire made of gold, aluminium or copper.
Claim: 11. The photovoltaic module according to claim 9 , wherein the conductor is a wire made of aluminium with 0 to 2% by weight Si and/or 0 to 2% by weight Mg.
Claim: 12. The photovoltaic module according to claim 1 , wherein the solar cell is disposed essentially in the centre on the conductive carrier.
Claim: 13. The photovoltaic module according to claim 12 , wherein the conductive carrier is polygonal, preferably rectangular.
Claim: 14. The photovoltaic module according to claim 1 , wherein two to 1000 SCAs are connected in series.
Claim: 15. The photovoltaic module according to claim 1 , wherein the insulating basic body is a glass plate or a metal plate coated with an insulating, dielectric layer.
Claim: 16. The photovoltaic module according to claim 15 wherein the layer thickness of the insulating, dielectric layer is 0.05 to 0.1 mm.
Claim: 17. The photovoltaic module according to claim 1 , wherein the insulating basic body is 0.1 to 5 mm thick.
Current U.S. Class: 136/244
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Other References: Dally et al., “The Design, Qualification and Use of Bypass Diode Integration onto GaAs/Ge Solar Cells” Conference Proceedings Article, May 13-17, 1996, pp. 333-335. cited by other
Jaus et al., “Heat Sink Substrates for Automated Assembly of Concentrator Modules” Presented at the 21st European Photovoltaic Solar Energy Conference and Exhibition, Sep. 4-8, 2006, pp. 1-4. cited by other
English translation of the International Preliminary Report on Patentability issued in PCT/EP2007010563. cited by other
English translation of Chinese Office Action issued in connection with corresponding Chinese Application No. 200780045161.0. cited by other
English translation of second Chinese Office Action issued in connection with corresponding Chinese Application No. 200780045161.0. cited by other
Assistant Examiner: Chern, Christina
Primary Examiner: Ridley, Basia
Attorney, Agent or Firm: Gauthier & Connors LLP
رقم الانضمام: edspgr.07977567
قاعدة البيانات: USPTO Patent Grants