Patent
Group-III nitride vertical-rods substrate
| العنوان: | Group-III nitride vertical-rods substrate |
|---|---|
| Patent Number: | 7,709,823 |
| تاريخ النشر: | May 04, 2010 |
| Appl. No: | 11/552527 |
| Application Filed: | October 25, 2006 |
| مستخلص: | The invention is directed to a group-III nitride vertical-rods substrate. The group-III vertical-rods substrate comprises a substrate, a buffer layer and a vertical rod layer. The buffer layer is located over the substrate. The vertical rod layer is located on the buffer layer and the vertical rod layer is comprised of a plurality of vertical rods standing on the buffer layer. |
| Inventors: | Lai, Chih-Ming (Pingtung County, TW); Liu, Wen-Yueh (Taipei, TW); Tsay, Jenq-Dar (Kaohsiung, TW); Hsu, Jung-Tsung (Hsinchu, TW); Gwo, Shang-Jr (Hsinchu, TW); Shen, Chang-Hong (Yilan County, TW); Lin, Hon-Way (Taipei, TW) |
| Assignees: | Industrial Technology Research Institute (Hsinchu, TW), National Tsing Hua University (Hsinchu, TW) |
| Claim: | 1. A group-III nitride vertical-rods substrate, comprising: a substrate; a buffer layer located over the substrate; a vertical rod layer located on the buffer layer, wherein the vertical rod layer is comprised of a plurality of vertical rods standing on the buffer layer; and each of the vertical rods is directly in contact with the buffer layer and the plurality of vertical rods and the buffer layer are made of different materials and a portion of a surface of the buffer layer is exposed between the vertical rods a group-III nitride semiconductor layer extending substantially across an entire area above the vertical rod layer. |
| Claim: | 2. The group-III nitride vertical-rods substrate of claim 1 , wherein the material of each of the vertical rod includes group-III nitride. |
| Claim: | 3. The group-III nitride vertical-rods substrate of claim 1 , wherein the material of each of the vertical rod includes gallium nitride. |
| Claim: | 4. The group-III nitride vertical-rods substrate of claim 1 , wherein the buffer layer is a multi-layered layer. |
| Claim: | 5. The group-III nitride vertical-rods substrate of claim 4 , wherein the multi-layered layer comprises a group-III nitride layer and a silicon nitride layer stacked on the group-III nitride layer. |
| Claim: | 6. The group-III nitride vertical-rods substrate of claim 4 , wherein the thickness of the buffer layer is about 1-60 nano meters. |
| Claim: | 7. The group-III nitride vertical-rods substrate of claim 1 , wherein the material of the buffer layer includes silicon nitride. |
| Claim: | 8. The group-III nitride vertical-rods substrate of claim 7 , wherein the thickness of the buffer layer is less than 10 nano meters. |
| Claim: | 9. The group-III nitride vertical-rods substrate of claim 1 , wherein a diameter of a cross-section of each of the vertical rods is about 60-150 nano meters. |
| Claim: | 10. The group-III nitride vertical-rods substrate of claim 1 , wherein the thickness of the vertical rod layer is about 10 nano meters 5 micrometers. |
| Claim: | 11. The group-III nitride vertical-rods substrate of claim 1 , wherein the distribution density of the vertical rods of the vertical rod layer over the substrate is about 109/cm2-1012/cm2. |
| Claim: | 12. The group-III nitride vertical-rods substrate of claim 1 , wherein the thickness of the group-III nitride semiconductor layer is larger than 20 micrometers. |
| Claim: | 13. A group-III nitride vertical-rods substrate, comprising: a substrate; a vertical rod layer located over the substrate, wherein the vertical rod layer is comprised of a plurality of vertical rods standing on a buffer layer over the substrate; and a group-III nitride semiconductor layer extending substantially across an entire area above the vertical rod layer, wherein the thickness of the group-III nitride semiconductor layer is larger than 20 micrometers. |
| Claim: | 14. The group-III nitride vertical-rods substrate of claim 13 , wherein the material of each of the vertical rod includes group-III nitride. |
| Claim: | 15. The group-III nitride vertical-rods substrate of claim 13 , wherein the material of each of the vertical rod includes gallium nitride. |
| Claim: | 16. The group-III nitride vertical-rods substrate of claim 13 , wherein the buffer layer is a multi-layered layer. |
| Claim: | 17. The group-III nitride vertical-rods substrate of claim 16 , wherein the multi-layered layer comprises a group-III nitride layer and a silicon nitride layer stacked on the group-III nitride layer. |
| Claim: | 18. The group-III nitride vertical-rods substrate of claim 13 , wherein the material of the buffer layer includes silicon nitride. |
| Claim: | 19. The group-III nitride vertical-rods substrate of claim 13 , wherein a diameter of a cross-section of each of the vertical rods is about 60-150 nano meters. |
| Claim: | 20. The group-III nitride vertical-rods substrate of claim 13 , wherein the thickness of the vertical rod layer is about 10 nano meters-5 micrometers. |
| Claim: | 21. The group-III nitride vertical-rods substrate of claim 13 , wherein the distribution density of the vertical rods of the vertical rod layer over the substrate is about 109/cm2-1012/cm2. |
| Current U.S. Class: | 257/9 |
| Patent References Cited: | 2002/0192441 December 2002 Kalkan et al. 2004/0157358 August 2004 Hiramatsu et al. 2005/0082543 April 2005 Alizadeh et al. 2005/0179052 August 2005 Yi et al. 2005/0194598 September 2005 Kim et al. 2005/0208302 September 2005 Yi et al. 2005/0235904 October 2005 Lee et al. 2006/0091408 May 2006 Kim et al. 1659713 August 2005 11-265853 September 1999 2003-031501 January 2003 |
| Assistant Examiner: | Chhaya, Swapneel |
| Primary Examiner: | Richards, N Drew |
| Attorney, Agent or Firm: | Jianq Chyun IP Office |
| رقم الانضمام: | edspgr.07709823 |
| قاعدة البيانات: | USPTO Patent Grants |
| الوصف غير متاح. |