Patent
Angular rate sensor and method of manufacturing the same
| العنوان: | Angular rate sensor and method of manufacturing the same |
|---|---|
| Patent Number: | 7,540,191 |
| تاريخ النشر: | June 02, 2009 |
| Appl. No: | 11/442306 |
| Application Filed: | May 30, 2006 |
| مستخلص: | An angular rate sensor 100 comprises a first structure 110 which includes a fixed portion 111 having an opening 114, a displacing portion 112 placed in the opening 114, and a connecting portion 113 adapted to connect the fixed portion 111 and the displacing portions 112; a second structure 130 which includes a weighting portion 132 joined to the displacing portion 112, and a pedestal portion 131 arranged to surround the weighting portions 132 and joined to the fixed portion 111, and is laminated in place on the first structure 110. A first body 140 formed by laminating a first metal layer 142 and a first insulating layer 141 thereon is joined to the fixed portion 111 such that the first insulating layer 141 faces the fixed portion 111. A second substrate 150 formed by laminating a second metal layer 152 and a second insulating layer 151 thereon is joined to the pedestal portion 131 such that the second insulating layer 151 faces the pedestal portion 131. |
| Inventors: | Hashimoto, Katsumi (Tokyo-To, JP); Takei, Jiro (Tokyo-To, JP) |
| Assignees: | Dai Nippon Printing Co., Ltd. (Tokyo, JP) |
| Claim: | 1. An angular rate sensor comprising: a first structure which includes a fixed portion having an opening, a displacing portion placed in the opening and configured to be displaced relative to the fixed portion, and a connecting portion adapted to connect the fixed portion and the displacing portion, and is formed of a substrate composed of a first semiconductor material; a second structure which includes a weighting portion respectively joined to the displacing portion, and a pedestal portion arranged to surround the weighting portion and joined to the fixed portion, and is laminated in place on the first structure and composed of a second semiconductor material; a first substrate laminated on the first structure; a second substrate laminated on the second structure; a vibration imparting portion adapted to impart vibration to the displacing portion of the first structure; and a displacement detecting portion adapted to detect displacement of the displacing portion; wherein: the first substrate, the fixed portion, the pedestal portion, and the second substrate form a sealed body together such that the displacing portion and the weighting portion can be moved in the sealed body; the first substrate includes a first metal layer and a first insulating layer laminated on the first metal layer, the first insulating layer including a first recess, and being connected to the fixed portion; and the second substrate includes a second metal layer and a second insulating layer laminated on the second metal layer, the second insulating layer including a second recess, and being connected to the pedestal portion. |
| Claim: | 2. The angular rate sensor according to claim 1 , wherein each of the first insulating layer of the first substrate and the second insulating layer of the second substrate is composed of a material capable of being etched. |
| Claim: | 3. The angular rate sensor according to claim 1 , wherein either of the first insulating layer of the first substrate or the second insulating layer of the second substrate has a third metal layer formed thereon. |
| Claim: | 4. The angular rate sensor according to claim 3 , wherein the vibration imparting portion is formed of the third metal layer. |
| Claim: | 5. The angular rate sensor according to claim 3 , wherein the displacement detecting portion is formed of the third metal layer. |
| Claim: | 6. The angular rate sensor according to claim 1 , wherein each of the first semiconductor material of the first structure and the second semiconductor material of the second structure is formed from silicon. |
| Claim: | 7. The angular rate sensor according to claim 1 , wherein a joining portion is provided between the first structure and the second structure. |
| Claim: | 8. The angular rate sensor according to claim 7 , wherein each of the first semiconductor material of the first structure and the second semiconductor material of the second structure is formed from silicon while the joining portion is formed from silicon oxide. |
| Current U.S. Class: | 7351/429 |
| Patent References Cited: | 5233213 August 1993 Marek 6400009 June 2002 Bishop et al. 2005/0253283 November 2005 DCamp et al. A-2002-350138 December 2002 |
| Assistant Examiner: | Diaz, Jose R |
| Primary Examiner: | Jackson, Jr., Jerome |
| Attorney, Agent or Firm: | Oliff & Berridge, PLC |
| رقم الانضمام: | edspgr.07540191 |
| قاعدة البيانات: | USPTO Patent Grants |
| الوصف غير متاح. |