Patent
Solid-state image sensor
| العنوان: | Solid-state image sensor |
|---|---|
| Patent Number: | 7,005,690 |
| تاريخ النشر: | February 28, 2006 |
| Appl. No: | 11/003380 |
| Application Filed: | December 06, 2004 |
| مستخلص: | The solid-state image sensor includes a pixel part 10, an analog circuit part 12, a digital circuit part 14 and an input/output circuit part 16. The digital circuit part 14 includes a first well 42c of a second conduction type formed in a second region of a semiconductor substrate 20 of a first conduction type surrounding a first region thereof; a first buried diffused layer 40c of the second conduction type buried in the first region: a second well 44b of the first conduction type formed near a surface of the semiconductor substrate 20 in the first region; and a first transistor 38e formed on the second well 44b. |
| Inventors: | Chijiiwa, Masahiro (Kawasaki, JP); Takeda, Shigetoshi (Kawasaki, JP); Katayama, Masaya (Kawasaki, JP) |
| Assignees: | Fujitsu Limited (Kawasaki, JP) |
| Claim: | 1. A solid-state image sensor comprising: a pixel part including photoelectric converter for photoelectrically converting incident light, which is formed in a semiconductor substrate of a first conduction type; an analog circuit part for processing an analog signal outputted by the pixel part; a digital circuit part for digital processing a signal outputted by the analog circuit part; and an input/output circuit part for inputting a signal to an outside or outputting a signal from the outside; the digital circuit part including a first well of a second conduction type different from the first conduction type formed in a second region of the semiconductor substrate surrounding a first region thereof, a first buried diffused layer of the second conduction type buried in the semiconductor substrate in the first region and connected to the first well at the side thereof, a second well of the first conduction type formed near a surface of the semiconductor substrate of the first region; and a first transistor formed on the second well; and the input/output circuit part including a third well of the second conduction type formed in a fourth region of the semiconductor substrate surrounding a third region, a second buried diffused layer of the second conduction type buried in the semiconductor substrate in the third region and connected to the third well at the side thereof, a fourth well of the first conduction type formed near the surface of the semiconductor substrate in the third region, and a second transistor formed on the fourth well. |
| Claim: | 2. A solid-state image sensor according to claim 1 , wherein the analog circuit part includes a fifth well of the second conduction type formed in a sixth region of the semiconductor substrate surrounding a fifth region thereof; a third buried diffused layer of the second conduction type buried in the semiconductor substrate in the fifth region and connected to the fifth well at the side thereof; a sixth well of the first conduction type formed near the surface of the semiconductor substrate in the third region; and a third transistor formed on the sixth well. |
| Claim: | 3. A solid-state image sensor according to claim 1 , further comprising another pixel part including a fifth well of the second conduction type formed in a sixth region of the semiconductor substrate surrounding the fifth region thereof; a third buried diffused layer of the second conduction type buried in the semiconductor substrate in the fifth region and connected to the fifth well at the side thereof; a sixth well of the first conduction type formed near the surface of the semiconductor substrate in the fifth region; and another photoelectric converter formed in the sixth well and shielded from light. |
| Claim: | 4. A solid-state image sensor comprising: a pixel part including photoelectric converter for photoelectrically converting incident light, which is formed in a semiconductor substrate of a first conduction type; an analog circuit part for processing an analog signal outputted by the pixel part; a digital circuit part for digital processing a signal outputted by the analog circuit part; and an input/output circuit part for inputting a signal to an outside or outputting a signal from the outside, the digital circuit part including a first well of a second conduction type different from the first conduction type formed in the semiconductor substrate; a second well of the first conduction type formed in the first well; and a first transistor formed on the second well; and the input/output circuit part including a third well of the second conduction type formed in the semiconductor substrate; a fourth well of the first conduction type formed in the third well; and a second transistor formed on the fourth well. |
| Claim: | 5. A solid-state image sensor according to claim 4 , wherein the analog circuit part includes a fifth well of the second conduction type formed in the semiconductor substrate; a sixth well of the first conduction type formed in the fifth well; and a third transistor formed on the sixth well. |
| Claim: | 6. A solid-state image sensor according to claim 4 , further comprising a fifth well of the second conduction type formed in the semiconductor substrate; a sixth well of the first conduction type formed in the fifth well; and another photoelectric converter formed in the sixth well and shielded from light. |
| Claim: | 7. A solid-state image sensor according to claim 1 , wherein the first well and the third well are formed integral with each other. |
| Claim: | 8. A solid-state image sensor according to claim 4 , wherein the first well and the third well are formed integral with each other. |
| Claim: | 9. A solid-state image sensor according to claim 1 , further comprising: a third transistor formed on the first well; and a fourth transistor formed on the third well. |
| Claim: | 10. A solid-state image sensor according to claim 4 , further comprising: a third transistor formed on the first well; and a fourth transistor formed on the third well. |
| Claim: | 11. A solid-state image sensor according to claim 2 , further comprising a fourth transistor formed on the fifth well. |
| Claim: | 12. A solid-state image sensor according to claim 5 , further comprising a fourth transistor formed on the fifth well. |
| Claim: | 13. A solid-state image sensor according to claim 3 , further comprising a third transistor formed on the sixth well. |
| Claim: | 14. A solid-state image sensor according to claim 6 , further comprising a third transistor formed on the sixth well. |
| Current U.S. Class: | 257/292 |
| Patent References Cited: | 6169318 January 2001 McGrath 2 335 097 September 1999 5-115047 May 1993 5-129572 May 1993 11-317667 November 1999 2002-199289 July 2002 2002-329854 November 2002 2002-334974 November 2002 |
| Primary Examiner: | Ho, Tu-Tu |
| Attorney, Agent or Firm: | Westerman, Hattori, Daniels & Adrian, LLP |
| رقم الانضمام: | edspgr.07005690 |
| قاعدة البيانات: | USPTO Patent Grants |
| الوصف غير متاح. |