Patent
Plasma-generating electrode device, an electrode-embedded article, and a method of manufacturing thereof
| العنوان: | Plasma-generating electrode device, an electrode-embedded article, and a method of manufacturing thereof |
|---|---|
| Patent Number: | 6,101,969 |
| تاريخ النشر: | August 15, 2000 |
| Appl. No: | 09/094,674 |
| Application Filed: | June 15, 1998 |
| مستخلص: | A plasma generating electrode device including a substrate 31 made of a dense ceramic, and an electrode 55 buried in said substrate 31, wherein said electrode 55 is isolated from a setting face of said substrate 31, and plasma is generated over said substrate. It is preferable that the minimum thickness of an electromagnetic wave permeation layer 37 is not less than 0.1 mm, the average thickness of the electromagnetic wave permeation layer is not less than 0.5 mm, the electrode 55 is a planar electrode made of a metal bulk, and the electrode is a monolithic sinter free from a joint face. This structure can be applied to an electric dust collector, an electromagnetic shield device or an electrostatic chuck. These can be preferably installed inside a semiconductor production unit using a halogen-based corrosive gas. The electrode can be embedded in the dense substrate made of the joint-free, joint face-free monolithic sinter by hot press sintering a ceramic molding and the electrode made of the planar metal bulk under pressure applied in a thickness direction of the electrode. |
| Inventors: | Niori, Yusuke (Inuyama, JPX); Umemoto, Koichi (Toyota, JPX); Ushikoshi, Ryusuke (Tajimi, JPX) |
| Assignees: | NGK Insulators, Ltd. (JPX) |
| Claim: | What is claimed is |
| Claim: | 1. An electrode-embedded article comprising a joint-free monolithic substrate made of a dense ceramic sinter, and an electrostatic chucking electrode embedded in said substrate and made of a planar metal bulk, said substrate surrounding said electrode being free from a joint face. |
| Claim: | 2. The electrode-embedded article of claim 1, in combination with a semiconductor production unit using a halogen-based corrosive gas. |
| Claim: | 3. The electrode-embedded article of claim 1, in combination with a semiconductor production unit, a nd wherein said electrode comprises a metal having a high melting point, said metal being selected from the group consisting of tantalum, tungsten, molybdenum, platinum and alloys thereof. |
| Claim: | 4. The electrode-embedded article of claim 1, wherein said electrode is a planar electrode made of a planar body having a plurality of holes. |
| Claim: | 5. The electrode-embedded article of claim 4, wherein said electrode is a mesh electrode. |
| Current U.S. Class: | 118/723E; 219/385; 219/457; 21912/143; 219/37; 118/723R; 156/345 |
| Current International Class: | C23C 1600 |
| Patent References Cited: | 1233395 July 1917 Patten 1905770 April 1933 Walker et al. 2160227 May 1939 Platt 4451349 May 1984 Yeh 4481407 November 1984 Stokes et al. 5079031 January 1992 Yamazaki et al. 5231690 July 1993 Soma et al. 5280156 January 1994 Niori et al. 5306895 April 1994 Ushikoshi et al. 5382311 January 1995 Ishikawa et al. 5432315 July 1995 Kaji et al. 5456757 October 1995 Aruga et al. 5460684 October 1995 Saeki et al. 5573690 November 1996 Nobori et al. 5800618 September 1998 Niori et al. |
| Primary Examiner: | Dang, Thi |
| Assistant Examiner: | Zervigon, Rudy |
| Attorney, Agent or Firm: | Parkhurst & Wendel, L.L.P. |
| رقم الانضمام: | edspgr.06101969 |
| قاعدة البيانات: | USPTO Patent Grants |
| الوصف غير متاح. |