التفاصيل البيبلوغرافية
| العنوان: |
SEMICONDUCTOR SUBSTRATE AND METHOD OF FORMING |
| Document Number: |
20130001748 |
| تاريخ النشر: |
January 3, 2013 |
| Appl. No: |
13/535509 |
| Application Filed: |
June 28, 2012 |
| مستخلص: |
A method of forming a semiconductive substrate material for an electronic device including forming a plurality of semiconductive layers on a substrate during a continuous growth process in a reaction chamber, wherein during the continuous growth process, a release layer is formed between a base layer and an epitaxial layer by altering at least one growth process parameter during the continuous growth process. The method also including separating the plurality of semiconductive layers from the substrate. |
| Inventors: |
Faurie, Jean-Pierre (Valbonne, FR); Beaumont, Bernard (Le Tignet, FR) |
| Assignees: |
SAINT-GOBAIN CERAMICS & PLASTICS, INC. (Worcester, MA, US) |
| Claim: |
1-186. (canceled) |
| Claim: |
187. A method of forming a semiconductive substrate material for an electronic device comprising: forming a plurality of semiconductive layers on a substrate during a continuous growth process in a reaction chamber, wherein during the continuous growth process, a release layer is formed between a base layer and an epitaxial layer by altering at least one growth process parameter during the continuous growth process; and separating the plurality of semiconductive layers from the substrate. |
| Claim: |
188. The method of claim 187, wherein the continuous growth process comprises a hydride vapor phase epitaxy (HVPE) process. |
| Claim: |
189. The method of claim 187, wherein the base layer comprises gallium nitride. |
| Claim: |
190. The method of claim 187, wherein the base layer comprises an absorption coefficient of not greater than about 50 cm−1 for radiation within the visible spectrum. |
| Claim: |
191. The method of claim 187, wherein the base layer comprises an absorption coefficient of at least about 0.1 cm−1 for radiation within the visible spectrum. |
| Claim: |
192. The method of claim 187, wherein forming comprises forming the base layer at a rate of at least about 50 microns/hr. |
| Claim: |
193. The method of claim 187, wherein forming comprises forming the base layer in a three-dimensional growth mode. |
| Claim: |
194. The method of claim 187, wherein altering the at least one growth process parameters includes changing the concentration of a vapor phase reactant material. |
| Claim: |
195. The method of claim 187, wherein the release layer comprises a dopant concentration of at least about 2×1018 cm−3. |
| Claim: |
196. The method of claim 187, wherein the release layer comprises an absorption coefficient of at least about 500 cm−1 for radiation within the visible spectrum. |
| Claim: |
197. The method of claim 187, wherein the epitaxial layer comprises an absorption coefficient less than an absorption coefficient of the release layer for radiation within the visible spectrum. |
| Claim: |
198. The method of claim 187, further comprising separating the plurality of semiconductive layers at the release layer. |
| Claim: |
199. The method of claim 198, wherein separating includes decomposing a portion of the release layer via radiation. |
| Claim: |
200. The method of claim 198, wherein separating includes directing radiation through at least one of the epitaxial layer or the base layer and impinging the radiation on the release layer. |
| Claim: |
201. The method of claim 187, wherein the release layer is a first release layer, and the method further comprises forming a second release layer separate from the first release layer. |
| Claim: |
202. The method of claim 201, wherein a portion of the epitaxial layer is disposed between the first release layer and the second release layer. |
| Claim: |
203. The method of claim 201, wherein the first release layer and the second release layer comprise a different absorption coefficient to a particulate wavelength of radiation. |
| Claim: |
204. The method of claim 201, wherein separating includes directing radiation through the base layer and impinging the radiation on the first release layer and separating the epitaxial layer and the second release layer. |
| Claim: |
205. A method of forming a semiconductive substrate material for an electronic device comprising: forming a base layer comprising a Group III-V material overlying a substrate in a reaction chamber, wherein depositing the base layer comprises a hydride vapor phase epitaxy (HVPE) process; continuing to grow the Group III-V material and introducing a first dopant material into the reaction chamber to form a first release layer overlying the base layer; continuing to grow the Group III-V material and removing the dopant from the reaction chamber to form a first epitaxial layer portion overlying the release layer; continuing to grow the Group III-V material and introducing a second dopant material into the reaction chamber to form a second release layer overlying the first epitaxial layer portion; and separating the first epitaxial layer portion from the base layer at the first release layer using radiation of a first wavelength impinging on the first release layer. |
| Claim: |
206. A semiconductor device comprising: a base layer comprising a Group III-V material; a first release layer comprising a Group III-V material overlying the base layer; and a first epitaxial layer portion comprising a Group III-V material overlying the first release layer, the first epitaxial layer portion comprising a dislocation density within a range between about 1×105 dislocations/cm2 and about 1×108 dislocations/cm2 as measured at an upper surface of the first epitaxial layer portion. |
| Current U.S. Class: |
257/615 |
| Current International Class: |
01; 01 |
| رقم الانضمام: |
edspap.20130001748 |
| قاعدة البيانات: |
USPTO Patent Applications |