التفاصيل البيبلوغرافية
| العنوان: |
FILM-FORMING APPARATUS AND FILM-FORMING METHOD |
| Document Number: |
20120325138 |
| تاريخ النشر: |
December 27, 2012 |
| Appl. No: |
13/527198 |
| Application Filed: |
June 19, 2012 |
| مستخلص: |
A film-forming apparatus and method comprising a film-forming chamber for supplying a reaction gas into, a cylindrical shaped liner provided between an inner wall of the film-forming chamber and a space for performing a film-forming process, a main-heater for heating a substrate placed inside the liner, from the bottom side, a sub-heater cluster provided between the liner and the inner wall, for heating the substrate from the top side, wherein the main-heater and the sub-heater cluster are resistive heaters, wherein the sub-heater cluster has a first sub-heater provided at the closest position to the substrate, and a second sub-heater provided above the first sub-heater, wherein the first sub-heater heats the substrate in combination with the main-heater, the second sub-heater heats the liner at a lower output than the first sub-heater, wherein each temperature of the main-heater, the first sub-heater, and the second sub-heater is individually controlled. |
| Inventors: |
SUZUKI, Kunihiko (Shizuoka, JP); Ito, Hideki (Kanagawa, JP); Ikeya, Naohisa (Kanagawa, JP); Tsuchida, Hidekazu (Kanagawa, JP); Kamata, Isaho (Tokyo, JP); Ito, Masahiko (Kanagawa, JP); Naito, Masami (Aichi, JP); Fujibayashi, Hiroaki (Kanagawa, JP); Adachi, Ayumu (Aichi, JP); Nishikawa, Koichi (Aichi, JP) |
| Assignees: |
NuFlare Techology, Inc. (Numazu-shi, JP), Toyota Jidosha Kabushiki Kaisha (Toyota-shi, JP), Denso Corporation (Kariya-shi, JP), Central Res. Institute of Electric Power Industry (Chiyoda-ku, JP) |
| Claim: |
1. A film-forming apparatus comprising: a film-forming chamber; a cylindrical shaped liner provided between an inner wall of the film-forming chamber and a space for performing a film-forming process; a main-heater for heating a substrate placed inside the liner, from the bottom side; a sub-heater cluster provided between the liner and the inner wall, for heating the substrate from the top side; wherein the main-heater and the sub-heater cluster are resistive heaters; wherein the sub-heater cluster has a first sub-heater provided at the closest position to the substrate, and a second sub-heater provided above the first sub-heater; wherein the first sub-heater heats the substrate in combination with the main-heater; the second sub-heater heats the liner at a lower output than the first sub-heater; wherein each temperature of the main-heater, the first sub-heater, and the second sub-heater is individually controlled. |
| Claim: |
2. The film-forming apparatus according to claim 1, wherein the main-heater has a disk-shaped in-heater; a ring-shaped out-heater provided above the in-heater and at the position corresponding to the periphery of the substrate; wherein each temperature of the in-heater and the out-heater are individually controlled. |
| Claim: |
3. The film-forming apparatus according to claim 1, further compromising: at least one other sub-heater for heating the liner at a lower output than the first sub-heater; wherein the other sub-heater is provided above the second sub-heater, and the temperature of the other sub-heater is controlled independently of the first sub-heater and the second sub-heater. |
| Claim: |
4. The film-forming apparatus according to claim 2, further comprising: at least one other sub-heater for heating the liner at a lower output than the first sub-heater; wherein the other sub-heater is provided above the second sub-heater, and the temperature of the other sub-heater is controlled independently of the first sub-heater and the second sub-heater. |
| Claim: |
5. A method for forming a film comprising: placing a substrate in a liner provided between an inner wall of a film-forming chamber and a space for performing the film-forming process in the film-forming chamber; heating the substrate to form a film onto the surface of the substrate; wherein the substrate is heated by a main-heater from the bottom side; a first sub-heater, provided at the closest position to the substrate, between the liner and the inner wall, used for heating the substrate from the top side; wherein a second sub-heater, provided above the first sub-heater, heats the liner at a lower output than the first sub-heater, during the film forming on the surface of the substrate. |
| Claim: |
6. The method for forming a film according to claim 5, wherein, the output of the main-heater is controlled depending on the temperature of the substrate; and the output of the first sub-heater is controlled depending on the output of the main-heater. |
| Claim: |
7. A film-forming apparatus comprising: a film-forming chamber; a cylindrical shaped liner provided between an inner wall of the film-forming chamber and a space for performing a film-forming process; a main-heater for heating a substrate placed inside the liner, from the bottom side; a sub-heater cluster provided between the liner and the inner wall, for heating the substrate from the top side; wherein the main-heater and the sub-heater cluster are resistive heaters; wherein the sub-heater cluster has a first sub-heater provided at the closest position to the substrate, and a second sub-heater provided above the first sub-heater; wherein the first sub-heater heats the substrate in combination with the main-heater; the second sub-heater heats the liner at the same output as the first sub-heater; wherein each temperature of the main-heater, the first sub-heater, and the second sub-heater is individually controlled. |
| Claim: |
8. The film-forming apparatus according to claim 7, wherein the main-heater has a disk-shaped in-heater; a ring-shaped out-heater provided above the in-heater and at the position corresponding to the periphery of the substrate; wherein each temperature of the in-heater and the out-heater are individually controlled. |
| Claim: |
9. The film-forming apparatus according to claim 7, further comprising: at least one other sub-heater for heating the liner is at the same output as the first sub-heater; wherein the other sub-heater is provided above the second sub-heater, and the temperature of the other sub-heater is controlled independently of the first sub-heater and the second sub-heater. |
| Claim: |
10. The film-forming apparatus according to claim 8, further comprising: at least one other sub-heater for heating the liner at the same output as the first sub-heater; wherein the other sub-heater is provided above the second sub-heater, and the temperature of the other sub-heater is controlled independently of the first sub-heater and the second sub-heater. |
| Claim: |
11. A method for forming a film comprising: placing a substrate in a liner provided between an inner wall of a film-forming chamber and a space for performing the film-forming process in the film-forming chamber; heating the substrate to form a film onto the surface of the substrate; wherein the substrate is heated by a main-heater from the bottom side; a first sub-heater, provided at the closest position to the substrate, between the liner and the inner wall, used for heating the substrate from the top side; wherein a second sub-heater, provided above the first sub-heater, heats the liner at the same output as the first sub-heater, during the film forming on the surface of the substrate. |
| Claim: |
12. The method for forming a film according to claim 11, wherein; the output of the main-heater is controlled depending on the temperature of the substrate; the output of the first sub-heater is controlled depending on the output of the main-heater. |
| Claim: |
13. A film-forming apparatus comprising: a film-forming chamber; a cylindrical shaped liner provided between an inner wall of the film-forming chamber and a space for performing a film-forming process; a main-heater for heating a substrate placed inside the liner, from the bottom side; a sub-heater cluster provided between the liner and the inner wall, for heating the substrate from the top side; wherein the main-heater and the sub-heater cluster are resistive heaters; wherein the sub-heater cluster has a first sub-heater provided at the closest position to the substrate, and a second sub-heater provided above the first sub-heater; wherein the first sub-heater heats the substrate in combination with the main-heater; the surface of the second sub-heater heats the liner at the same temperature, or lower temperature, than the surface of first sub-heater; wherein each temperature of the main-heater, the first sub-heater, and the second sub-heater is individually controlled. |
| Claim: |
14. The film-forming apparatus according to claim 13, wherein the main-heater has a disk-shaped in-heater; a ring-shaped out-heater provided above the in-heater and at the position corresponding to the periphery of the substrate; wherein each temperature of the in-heater and the out-heater are individually controlled. |
| Claim: |
15. The film-forming apparatus according to claim 13, further comprising: at least one other sub-heater for heating the liner at the same temperature, or a lower temperature, than the surface of first sub-heater; wherein the other sub-heater is provided above the second sub-heater, and the temperature of the other sub-heater is controlled independently of the first sub-heater and the second sub-heater. |
| Claim: |
16. The film-forming apparatus according to claim 14, further comprising: at least one other sub-heater for heating the liner at the same temperature, or a lower temperature, than the surface of first sub-heater; wherein the other sub-heater is provided above the second sub-heater, and the temperature of the other sub-heater is controlled independently of the first sub-heater and the second sub-heater. |
| Claim: |
17. A method for forming a film comprising: placing a substrate in a liner provided between an inner wall of a film-forming chamber and a space for performing the film-forming process in the film-forming chamber; heating the substrate to form a film onto the surface of the substrate; wherein the substrate is heated by a main-heater from the bottom side; a first sub-heater, provided at the closest position to the substrate, between the liner and the inner wall, used for heating the substrate from the top side; wherein a second sub-heater provided above the first sub-heater heats the liner at the same temperature, or a lower temperature, than the surface of first sub-heater while the film is formed onto the surface of the substrate; wherein the surface of the second sub-heater heats the liner at the same temperature, or lower temperature, than the surface of first sub-heater. |
| Claim: |
18. The method for forming a film according to claim 17, wherein, the temperature of the surface of the main-heater is controlled depending on the temperature of the substrate; the temperature of the surface of the first sub-heater is controlled depending on the temperature of the surface of the main-heater. |
| Current U.S. Class: |
117/88 |
| Current International Class: |
30 |
| رقم الانضمام: |
edspap.20120325138 |
| قاعدة البيانات: |
USPTO Patent Applications |