التفاصيل البيبلوغرافية
| العنوان: |
NITRIDE SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE |
| Document Number: |
20120241759 |
| تاريخ النشر: |
September 27, 2012 |
| Appl. No: |
13/501891 |
| Application Filed: |
October 15, 2010 |
| مستخلص: |
A nitride semiconductor device having a high withstand voltage and being capable of reducing a leakage current, is provided. The nitride semiconductor device 30 of the present invention includes: a nitride semiconductor stack; an anode 36; and cathodes 37 and 38. The nitride semiconductor stack includes: a channel layer 33 and a wide bandgap layer 35, stacked in this order. The anode 36 forms a Schottky junction with the wide bandgap layer 35. The cathodes 37 and 38 are joined to the channel layer 33. The channel layer 33 is an n+-type nitride semiconductor layer. The bandgap of the wide bandgap layer 35 is wider than that of the channel layer 33. |
| Inventors: |
Matsunaga, Koji (Tokyo, JP); Tanomura, Masahiro (Tokyo, JP) |
| Assignees: |
NEC CORPORATION (Tokyo, JP) |
| Claim: |
1. A nitride semiconductor device comprising: a nitride semiconductor stack including a channel layer and a wide bandgap layer being stacked in this order; an anode; and a cathode, wherein the anode forms a Schottky junction with the wide bandgap layer, the cathode is joined to the channel layer, the channel layer is an n+-type nitride semiconductor layer, and a bandgap of the wide bandgap layer is wider than that of the channel layer. |
| Claim: |
2. The nitride semiconductor device according to claim 1, wherein the nitride semiconductor stack further includes a barrier layer, the channel layer and the wide bandgap layer are stacked on each other via the barrier layer, and the bandgap of the wide bandgap layer is wider than that of the barrier layer. |
| Claim: |
3. The nitride semiconductor device according to claim 1, wherein the n+-type nitride semiconductor layer is an n+-type GaN layer, and the wide bandgap layer includes at least one of a SiN layer and an AlN layer. |
| Claim: |
4. The nitride semiconductor device according to claim 2, wherein the n+-type nitride semiconductor layer is an n+-type GaN layer, the barrier layer is an undoped AlGaN layer, and the wide bandgap layer includes at least one of a SiN layer and an AlN layer. |
| Claim: |
5. The nitride semiconductor device according to claim 1, wherein an opening part to be filled or a notch part, reaching from the upper surface of the layer stacked on the channel layer to the upper part of the channel layer, is formed in a part of the layer stacked on the channel layer of the nitride semiconductor stack, and the cathode is joined to the upper surface of the channel layer. |
| Claim: |
6. The nitride semiconductor device according to claim 5, wherein the opening part to be filled or the notch part is formed by removing the part of the layer stacked on the channel layer. |
| Claim: |
7. The nitride semiconductor device according to claim 1, wherein an impurity concentration in the n+-type nitride semiconductor layer is 5×1017 cm−3 or more. |
| Claim: |
8. The nitride semiconductor device according to claim 1, further comprising: a high-resistance substrate; and a buffer layer, wherein the channel layer is stacked on the high-resistance substrate via the buffer layer. |
| Claim: |
9. The nitride semiconductor device according to claim 1, being a Schottky diode. |
| Claim: |
10. A nitride semiconductor device comprising: a substrate; a diode part; and a field effect transistor, wherein the diode part and the field effect transistor are mounted on the substrate, and the diode part is the nitride semiconductor device according to claim 9. |
| Claim: |
11. An electronic device comprising the nitride semiconductor device according to claim 1. |
| Current U.S. Class: |
257/76 |
| Current International Class: |
01 |
| رقم الانضمام: |
edspap.20120241759 |
| قاعدة البيانات: |
USPTO Patent Applications |