التفاصيل البيبلوغرافية
| العنوان: |
MANUFACTURING METHOD OF INTEGRATED CIRCUITS BASED ON FORMATION OF LINES AND TRENCHES |
| Document Number: |
20120225560 |
| تاريخ النشر: |
September 6, 2012 |
| Appl. No: |
13/411397 |
| Application Filed: |
March 02, 2012 |
| مستخلص: |
The disclosure relates to a method for etching a target layer, comprising: depositing a hard mask layer onto a target layer and onto the hard mask layer, a first photosensitive layer, exposing the first photosensitive layer through a first mask to transfer first patterns into the photosensitive layer, transferring the first patterns into the hard mask layer, depositing onto the hard mask layer etched a second photosensitive layer, exposing the second photosensitive layer through a second mask to transfer second patterns into the second photosensitive layer, transferring the second patterns into the hard mask layer by etching this layer, and transferring the first and second patterns into the target layer through the hard mask, the second patterns forming lines, and the first patterns forming trenches cutting the lines in the hard mask. |
| Inventors: |
Gouraud, Pascal (Montbonnot St. Martin, FR); Le-Gratiet, Bertrand (Grenoble, FR) |
| Assignees: |
STMICROELECTRONICS (CROLLES 2) SAS (Crolles, FR) |
| Claim: |
1. A method for etching a target layer, comprising: depositing a first hard mask layer on a target layer and on the first hard mask layer, a first photosensitive layer; transferring first patterns to the first photosensitive layer by exposing the first photosensitive layer to a beam of particles through a first mask; forming the first patterns in the photosensitive layer; transferring the first patterns into the first hard mask layer by etching the first hard mask layer through the first photosensitive layer; depositing onto the etched first hard mask layer a second photosensitive layer; transferring second patterns to the second photosensitive layer by exposing the second photosensitive layer to a beam of particles through a second mask; forming the second patterns in the second photosensitive layer; transferring the second patterns into the first hard mask layer by etching first the hard mask layer through the second photosensitive layer; and transferring the first and second patterns into the target layer by etching the target layer through the first hard mask layer, wherein the second patterns form lines of the first hard mask layer, and the first patterns form trenches through the lines of the first hard mask layer. |
| Claim: |
2. A method according to claim 1, comprising, after transferring the second patterns into the first hard mask layer and before etching the target layer: depositing onto the etched first hard mask layer a third photosensitive layer, transferring third patterns to the third photosensitive layer by exposing the third photosensitive layer to a beam of particles through a third mask, forming the third patterns in the third photosensitive layer, and transferring the third patterns into the first hard mask layer by etching the first hard mask layer through the third photosensitive layer, the target layer being etched according to the first, second and third patterns formed in the first hard mask layer, the third patterns forming lines of the target layer that are spaced apart by the first patterns. |
| Claim: |
3. A method according to claim 1, wherein one or each of the photosensitive layers is directly deposited onto the first hard mask layer, the photosensitive layer having a reflection coefficient of the beam of particles lower than 1%, and a planar upper face, and covers the first hard mask layer without trapping gas bubbles. |
| Claim: |
4. A method according to claim 3, wherein an upper surface of at least one of the photosensitive layers has a height variation lower than 20%. |
| Claim: |
5. A method according to claim 1, further comprising: depositing an additional layer onto the first hard mask layer, at least one of the photosensitive layers being deposited onto the additional layer; and transferring to the additional layer the patterns formed in the at least one photosensitive layer deposited onto the additional layer by etching the additional layer. |
| Claim: |
6. A method according to claim 5, wherein the additional layer has a reflection coefficient of the beam of particles lower than 1%, and a planar upper face, and covers the first hard mask layer without trapping gas bubbles. |
| Claim: |
7. A method according to claim 5, wherein an upper surface of at least one of the photosensitive layers has a height variation lower than 20%. |
| Claim: |
8. A method according to claim 7, further comprising: depositing a second hard mask layer on the additional layer, wherein at least one of the photosensitive layers is deposited onto the second hard mask layer; and transferring to the second hard mask layer the patterns formed in the at least one photosensitive layer deposited on the second hard mask layer by etching the second hard mask layer. |
| Claim: |
9. A method according to claim 1, wherein etching the target layer includes forming gates of CMOS transistors. |
| Claim: |
10. A method, comprising: forming on a target layer a patterned first hard mask layer with first patterns; depositing a first photosensitive layer onto the patterned to the additional layer hard mask layer; forming second patterns in the first photosensitive layer; transferring the second patterns into the to the additional layer hard mask layer by etching the to the additional layer hard mask layer through the first photosensitive layer; and transferring the first and second patterns into the target layer by etching the target layer through the to the additional layer hard mask layer, wherein the second patterns form lines of the to the additional layer hard mask layer, and the first patterns form trenches through the lines of the hard mask layer. |
| Claim: |
11. A method according to claim 10, comprising, after transferring the second patterns into the to the additional layer hard mask layer and before etching the target layer: forming on the to the additional layer hard mask layer a second photosensitive layer having third patterns, and transferring the third patterns into the to the additional layer hard mask layer by etching the to the additional layer hard mask layer through the third photosensitive layer, the target layer being etched according to the first, second and third patterns formed in the hard mask layer, the third patterns forming lines of the target layer that are spaced apart by the first patterns. |
| Claim: |
12. A method according to claim 10, wherein: depositing the first photosensitive layer includes directly depositing the first photosensitive layer on the to the additional layer hard mask layer; forming second patterns in the first photosensitive layer includes transferring second patterns to the second photosensitive layer by exposing the second photosensitive layer to a beam of particles through a mask; and the photosensitive layer has a reflection coefficient of the beam of particles lower than 1%, and a planar upper face, and covers the to the additional layer hard mask layer without trapping gas bubbles. |
| Claim: |
13. A method according to claim 12, wherein an upper surface of the first photosensitive layer has a height variation lower than 20%. |
| Claim: |
14. A method according to claim 10, further comprising: depositing an additional layer onto the to the additional layer hard mask layer, the first photosensitive layer being deposited onto the additional layer; and transferring the patterns formed in the first photosensitive layer to the additional layer by etching the additional layer. |
| Claim: |
15. A method according to claim 14, wherein: forming second patterns in the first photosensitive layer includes transferring second patterns to the second photosensitive layer by exposing the second photosensitive layer to a beam of particles through a mask; and the additional layer has a reflection coefficient of the beam of particles lower than 1%, and a planar upper face, and covers the to the additional layer hard mask layer without trapping gas bubbles. |
| Claim: |
16. A method according to claim 14, wherein an upper surface of the first photosensitive layer has a height variation lower than 20%. |
| Claim: |
17. A method according to claim 16, further comprising: depositing a second hard mask layer on the additional layer, wherein the first photosensitive layer is deposited onto the second hard mask layer; and transferring the patterns formed in the first photosensitive layer to the second hard mask layer by etching the second hard mask layer. |
| Claim: |
18. A method according to claim 10, wherein etching the target layer includes forming gates of CMOS transistors. |
| Claim: |
19. A method according to claim 10, wherein forming on the target layer the patterned first hard mask layer with first patterns includes: depositing the first hard mask layer on a target layer; depositing a second photosensitive layer on the first hard mask layer; transferring the first patterns to the second photosensitive layer by exposing the second photosensitive layer to a beam of particles through a mask; forming the first patterns in the second photosensitive layer; transferring the first patterns into the first hard mask layer by etching the first hard mask layer through the second photosensitive layer. |
| Current U.S. Class: |
438/703 |
| Current International Class: |
01 |
| رقم الانضمام: |
edspap.20120225560 |
| قاعدة البيانات: |
USPTO Patent Applications |