التفاصيل البيبلوغرافية
| العنوان: |
Semiconductor Manufacturing Method |
| Document Number: |
20100291772 |
| تاريخ النشر: |
November 18, 2010 |
| Appl. No: |
12/466468 |
| Application Filed: |
May 15, 2009 |
| مستخلص: |
The present invention discloses a semiconductor manufacturing method. The method for activating a p-type impurity doped in a semiconductor element in a chamber comprises that a vacuum pressure is exerted to the chamber first, and the semiconductor element is heated to a preset temperature and the heating is persisted for a preset period to activate the p-type impurity doped in the semiconductor element. |
| Inventors: |
YANG, Cheng-Chung (Huatan Township, TW); Hsu, Ming-Sen (Sinhua Township, TW) |
| Claim: |
1. A semiconductor manufacturing method, applicable in a chamber to activate a p-type impurity doped in a semiconductor element, comprising steps of: exerting a vacuum pressure to the chamber; heating the semiconductor element to a preset temperature; and heating continuously for a preset period. |
| Claim: |
2. The semiconductor manufacturing method in claim 1, wherein a transparent conductive layer is further formed on the semiconductor element. |
| Claim: |
3. The semiconductor manufacturing method in claim 2, wherein the transparent conductive layer is made of a material selected from a group consisting of indium tin oxide (ITO), cadmium tin oxide (CTO), tin-doped silver indium oxide (AgInO2:Sn), aluminum-doped zinc oxide (ZnO:Al; AZO) and aluminum zinc oxide (AZO). |
| Claim: |
4. The semiconductor manufacturing method in claim 1, wherein the semiconductor element is selected from the group consisting of a III-V group semiconductor element and a II-VI group semiconductor element. |
| Claim: |
5. The semiconductor manufacturing method in claim 1, wherein the p-type impurity is selected from the group consisting of magnesium (Mg), zinc (Zn), carbon (C) and beryllium (Be). |
| Claim: |
6. The semiconductor manufacturing method in claim 1, wherein the preset temperature is lower than 400° C. |
| Claim: |
7. The semiconductor manufacturing method in claim 1, wherein the vacuum pressure is lower than 10−2 torr. |
| Claim: |
8. The semiconductor manufacturing method in claim 1, wherein the preset period is the time required for activating the p-type impurity doped in the semiconductor element. |
| Current U.S. Class: |
438/796 |
| Current International Class: |
01 |
| رقم الانضمام: |
edspap.20100291772 |
| قاعدة البيانات: |
USPTO Patent Applications |