التفاصيل البيبلوغرافية
| العنوان: |
GaN-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT, LIGHT-EMITTING ELEMENT ASSEMBLY, LIGHT-EMITTING APPARATUS, METHOD OF MANUFACTURING GaN-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT, METHOD OF DRIVING GaN-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND IMAGE DISPLAY APPARATUS |
| Document Number: |
20090230878 |
| تاريخ النشر: |
September 17, 2009 |
| Appl. No: |
12/402160 |
| Application Filed: |
March 11, 2009 |
| مستخلص: |
A GaN-based semiconductor light-emitting element includes a first GaN-based compound semiconductor layer of n-conductivity type, an active layer, a second GaN-based compound semiconductor layer of p-conductivity type, a first electrode electrically connected to the first GaN-based compound semiconductor layer, a second electrode electrically connected to the second GaN-based compound semiconductor layer, an impurity diffusion-preventing layer composed of an undoped GaN-based compound semiconductor, the impurity diffusion-preventing layer preventing a p-type impurity from diffusing into the active layer, and a laminated structure or a third GaN-based compound semiconductor layer of p-conductivity type. The impurity diffusion-preventing layer and the laminated structure or the third GaN-based compound semiconductor layer of p-conductivity type are disposed, between the active layer and the second GaN-based compound semiconductor layer, in that order from the active layer side. |
| Inventors: |
Naito, Hiroki (Kanagawa, JP); Okuyama, Hiroyuki (Kanagawa, JP); Biwa, Goshi (Kanagawa, JP); Nishinaka, Ippei (Kanagawa, JP) |
| Assignees: |
SONY CORPORATION (Tokyo, JP) |
| Claim: |
1. A GaN-based semiconductor light-emitting element comprising: a first GaN-based compound semiconductor layer of n-conductivity type; an active layer; a second GaN-based compound semiconductor layer of p-conductivity type; a first electrode electrically connected to the first GaN-based compound semiconductor layer; a second electrode electrically connected to the second GaN-based compound semiconductor layer; an impurity diffusion-preventing layer composed of an undoped GaN-based compound semiconductor, the impurity diffusion-preventing layer preventing a p-type impurity from diffusing into the active layer; and a laminated structure, wherein the impurity diffusion-preventing layer and the laminated structure are disposed, between the active layer and the second GaN-based compound semiconductor layer, in that order from the active layer side; and the laminated structure includes at least one laminate unit in which a GaN-based compound semiconductor layer of p-conductivity type and an undoped GaN-based compound semiconductor layer are stacked in that order from the active layer side. |
| Claim: |
2. The GaN-based semiconductor light-emitting element according to claim 1, wherein the GaN-based compound semiconductor layer of p-conductivity type and the undoped GaN-based compound semiconductor layer constituting the laminate unit have the same composition. |
| Claim: |
3. The GaN-based semiconductor light-emitting element according to claim 1, wherein the undoped GaN-based compound semiconductor layer constituting the laminate unit includes a GaN-based compound semiconductor layer, the composition of which contains indium. |
| Claim: |
4. The GaN-based semiconductor light-emitting element according to claim 3, wherein the undoped GaN-based compound semiconductor layer constituting the laminate unit has a three-layer structure including a first layer having the same composition as the GaN-based compound semiconductor layer of p-conductivity type constituting the laminate unit, a second layer having the composition which is the same as the first layer and which further contains indium, and a third layer having the same composition as the first layer. |
| Claim: |
5. The GaN-based semiconductor light-emitting element according to claim 4, wherein the undoped GaN-based compound semiconductor layer constituting the laminate unit has a three-layer structure including the first layer composed of undoped GaN, the second layer composed of undoped InxGa(1-x)N (wherein 0
|
| Claim: |
6. The GaN-based semiconductor light-emitting element according to claim 5, wherein the active layer includes an InyGa(1-y)N layer, and x≦y. |
| Claim: |
7. The GaN-based semiconductor light-emitting element according to claim 1, wherein the laminated structure includes one to ten laminate units. |
| Claim: |
8. The GaN-based semiconductor light-emitting element according to claim 1, wherein the GaN-based compound semiconductor layer of p-conductivity type constituting the laminate unit has a p-type impurity concentration of 1×1018/cm3 to 4×1020/cm3. |
| Claim: |
9. The GaN-based semiconductor light-emitting element according to claim 1, wherein the thickness of the GaN-based compound semiconductor layer of p-conductivity type constituting the laminate unit is in the range of two-atomic-layer thickness to 50 nm, and the thickness of the undoped GaN-based compound semiconductor layer constituting the laminate unit is in the range of two-atomic-layer thickness to 50 nm. |
| Claim: |
10. The GaN-based semiconductor light-emitting element according to claim 1, wherein the thickness of the laminated structure is in the range of 5 nm to 200 nm. |
| Claim: |
11. The GaN-based semiconductor light-emitting element according to claim 1, wherein the density of a current applied to the active layer is 50 amperes/cm2 or more. |
| Claim: |
12. The GaN-based semiconductor light-emitting element according to claim 1, wherein the area of the active layer is 1×10−12 m2 to 1×10−8 m2. |
| Claim: |
13. The GaN-based semiconductor light-emitting element according to claim 1, wherein the thickness of the GaN-based semiconductor light-emitting element is 1×10−7 m to 1×10−5 m. |
| Claim: |
14. A GaN-based semiconductor light-emitting element comprising: a first GaN-based compound semiconductor layer of n-conductivity type; an active layer; a second GaN-based compound semiconductor layer of p-conductivity type; a first electrode electrically connected to the first GaN-based compound semiconductor layer; a second electrode electrically connected to the second GaN-based compound semiconductor layer; an impurity diffusion-preventing layer composed of an undoped GaN-based compound semiconductor, the impurity diffusion-preventing layer preventing a p-type impurity from diffusing into the active layer; and a third GaN-based compound semiconductor layer of p-conductivity type, wherein the impurity diffusion-preventing layer and the third GaN-based compound semiconductor layer are disposed, between the active layer and the second GaN-based compound semiconductor layer, in that order from the active layer side; and at least one undoped GaN-based compound semiconductor layer is disposed on a side, closer to the second GaN-based compound semiconductor layer, of the third GaN-based compound semiconductor layer. |
| Claim: |
15. The GaN-based semiconductor light-emitting element according to claim 14, wherein the third GaN-based compound semiconductor layer of p-conductivity type and the undoped GaN-based compound semiconductor layer disposed on the third GaN-based compound semiconductor layer have the same composition. |
| Claim: |
16. The GaN-based semiconductor light-emitting element according to claim 14, wherein the undoped GaN-based compound semiconductor layer disposed on the third GaN-based compound semiconductor layer includes a GaN-based compound semiconductor layer, the composition of which contains indium. |
| Claim: |
17. The GaN-based semiconductor light-emitting element according to claim 16, wherein the undoped GaN-based compound semiconductor layer disposed on the third GaN-based compound semiconductor layer has a three-layer structure including a first layer having the same composition as the third GaN-based compound semiconductor layer of p-conductivity type, a second layer having the composition which is the same as the first layer and which further contains indium, and a third layer having the same composition as the first layer. |
| Claim: |
18. The GaN-based semiconductor light-emitting element according to claim 17, wherein the undoped GaN-based compound semiconductor layer disposed on the third GaN-based compound semiconductor layer has a three-layer structure including the first layer composed of undoped GaN, the second layer composed of undoped InxGa(1-x)N (wherein 0
|
| Claim: |
19. The GaN-based semiconductor light-emitting element according to claim 18, wherein the active layer includes an InyGa(1-y)N layer, and x≦y. |
| Claim: |
20. The GaN-based semiconductor light-emitting element according to claim 14, wherein one to ten undoped GaN-based compound semiconductor layers are disposed on the third GaN-based compound semiconductor layer. |
| Claim: |
21. The GaN-based semiconductor light-emitting element according to claim 14, wherein the third GaN-based compound semiconductor layer has a p-type impurity concentration of 1×1018/cm3 to 4×1020/cm3. |
| Claim: |
22. The GaN-based semiconductor light-emitting element according to claim 14, wherein the thickness of the undoped GaN-based compound semiconductor layer disposed on the third GaN-based compound semiconductor layer is in the range of two-atomic-layer thickness to 50 nm, and the thickness of the third GaN-based compound semiconductor layer is in the range of 5 nm to 200 nm. |
| Claim: |
23. The GaN-based semiconductor light-emitting element according to claim 14, wherein the density of a current applied to the active layer is 50 amperes/cm2 or more. |
| Claim: |
24. The GaN-based semiconductor light-emitting element according to claim 14, wherein the area of the active layer is 1×10−12 m2 to 1×10−8 m2. |
| Claim: |
25. The GaN-based semiconductor light-emitting element according to claim 14, wherein the thickness of the GaN-based semiconductor light-emitting element is 1×10−7 m to 1×105 m. |
| Claim: |
26. A light-emitting element assembly comprising: a GaN-based semiconductor light-emitting element disposed on a supporting member, wherein the GaN-based semiconductor light-emitting element includes a first GaN-based compound semiconductor layer of n-conductivity type; an active layer; a second GaN-based compound semiconductor layer of p-conductivity type; a first electrode electrically connected to the first GaN-based compound semiconductor layer; a second electrode electrically connected to the second GaN-based compound semiconductor layer; an impurity diffusion-preventing layer composed of an undoped GaN-based compound semiconductor, the impurity diffusion-preventing layer preventing a p-type impurity from diffusing into the active layer; and a laminated structure, wherein the impurity diffusion-preventing layer and the laminated structure are disposed, between the active layer and the second GaN-based compound semiconductor layer, in that order from the active layer side; and the laminated structure includes at least one laminate unit in which a GaN-based compound semiconductor layer of p-conductivity type and an undoped GaN-based compound semiconductor layer are stacked in that order from the active layer side. |
| Claim: |
27. A light-emitting element assembly comprising: a GaN-based semiconductor light-emitting element disposed on a supporting member, wherein the GaN-based semiconductor light-emitting element includes a first GaN-based compound semiconductor layer of n-conductivity type; an active layer; a second GaN-based compound semiconductor layer of p-conductivity type; a first electrode electrically connected to the first GaN-based compound semiconductor layer; a second electrode electrically connected to the second GaN-based compound semiconductor layer; an impurity diffusion-preventing layer composed of an undoped GaN-based compound semiconductor, the impurity diffusion-preventing layer preventing a p-type impurity from diffusing into the active layer; and a third GaN-based compound semiconductor layer of p-conductivity type, wherein the impurity diffusion-preventing layer and the third GaN-based compound semiconductor layer are disposed, between the active layer and the second GaN-based compound semiconductor layer, in that order from the active layer side; and at least one undoped GaN-based compound semiconductor layer is disposed on a side, closer to the second GaN-based compound semiconductor layer, of the third GaN-based compound semiconductor layer. |
| Claim: |
28. A light-emitting apparatus comprising: a GaN-based semiconductor light-emitting element; and a color conversion material which is excited by emitted light from the GaN-based semiconductor light-emitting element to emit light with a different wavelength from that of the emitted light, wherein the GaN-based semiconductor light-emitting element includes a first GaN-based compound semiconductor layer of n-conductivity type; an active layer; a second GaN-based compound semiconductor layer of p-conductivity type; a first electrode electrically connected to the first GaN-based compound semiconductor layer; a second electrode electrically connected to the second GaN-based compound semiconductor layer; an impurity diffusion-preventing layer composed of an undoped GaN-based compound semiconductor, the impurity diffusion-preventing layer preventing a p-type impurity from diffusing into the active layer; and a laminated structure, wherein the impurity diffusion-preventing layer and the laminated structure are disposed, between the active layer and the second GaN-based compound semiconductor layer, in that order from the active layer side; and the laminated structure includes at least one laminate unit in which a GaN-based compound semiconductor layer of p-conductivity type and an undoped GaN-based compound semiconductor layer are stacked in that order from the active layer side. |
| Claim: |
29. A light-emitting apparatus comprising: a GaN-based semiconductor light-emitting element; and a color conversion material which is excited by emitted light from the GaN-based semiconductor light-emitting element to emit light with a different wavelength from that of the emitted light, wherein the GaN-based semiconductor light-emitting element includes a first GaN-based compound semiconductor layer of n-conductivity type; an active layer; a second GaN-based compound semiconductor layer of p-conductivity type; a first electrode electrically connected to the first GaN-based compound semiconductor layer; a second electrode electrically connected to the second GaN-based compound semiconductor layer; an impurity diffusion-preventing layer composed of an undoped GaN-based compound semiconductor, the impurity diffusion-preventing layer preventing a p-type impurity from diffusing into the active layer; and a third GaN-based compound semiconductor layer of p-conductivity type, wherein the impurity diffusion-preventing layer and the third GaN-based compound semiconductor layer are disposed, between the active layer and the second GaN-based compound semiconductor layer, in that order from the active layer side; and at least one undoped GaN-based compound semiconductor layer is disposed on a side, closer to the second GaN-based compound semiconductor layer, of the third GaN-based compound semiconductor layer. |
| Claim: |
30. A method of manufacturing a GaN-based semiconductor light-emitting element which includes a first GaN-based compound semiconductor layer of n-conductivity type; an active layer; a second GaN-based compound semiconductor layer of p-conductivity type; a first electrode electrically connected to the first GaN-based compound semiconductor layer; a second electrode electrically connected to the second GaN-based compound semiconductor layer; an impurity diffusion-preventing layer composed of an undoped GaN-based compound semiconductor, the impurity diffusion-preventing layer preventing a p-type impurity from diffusing into the active layer; and a laminated structure, wherein the impurity diffusion-preventing layer and the laminated structure are disposed, between the active layer and the second GaN-based compound semiconductor layer, in that order from the active layer side, the laminated structure includes at least one laminate unit in which a GaN-based compound semiconductor layer of p-conductivity type and an undoped GaN-based compound semiconductor layer are stacked in that order from the active layer side, the undoped GaN-based compound semiconductor layer constituting the laminate unit includes a GaN-based compound semiconductor layer, the composition of which contains indium, and the active layer includes a GaN-based compound semiconductor layer, the composition of which contains indium, the method comprising: sequentially forming the first GaN-based compound semiconductor layer, the active layer, the impurity diffusion-preventing layer, the laminated structure, and the second GaN-based compound semiconductor layer, wherein the GaN-based compound semiconductor layer, the composition of which contains indium, in the undoped GaN-based compound semiconductor layer constituting the laminate unit is formed at a higher temperature than the temperature at which the GaN-based compound semiconductor layer, the composition of which contains indium, in the active layer is formed. |
| Claim: |
31. A method of manufacturing a GaN-based semiconductor light-emitting element which includes a first GaN-based compound semiconductor layer of n-conductivity type; an active layer; a second GaN-based compound semiconductor layer of p-conductivity type; a first electrode electrically connected to the first GaN-based compound semiconductor layer; a second electrode electrically connected to the second GaN-based compound semiconductor layer; an impurity diffusion-preventing layer composed of an undoped GaN-based compound semiconductor, the impurity diffusion-preventing layer preventing a p-type impurity from diffusing into the active layer; and a third GaN-based compound semiconductor layer of p-conductivity type, wherein the impurity diffusion-preventing layer and the third GaN-based compound semiconductor layer are disposed, between the active layer and the second GaN-based compound semiconductor layer, in that order from the active layer side, at least one undoped GaN-based compound semiconductor layer is disposed on a side, closer to the second GaN-based compound semiconductor layer, of the third GaN-based compound semiconductor layer, the undoped GaN-based compound semiconductor layer disposed on the third GaN-based compound semiconductor layer includes a GaN-based compound semiconductor layer, the composition of which contains indium, and the active layer includes a GaN-based compound semiconductor layer, the composition of which contains indium, the method comprising: sequentially forming the first GaN-based compound semiconductor layer, the active layer, the impurity diffusion-preventing layer, the third GaN-based compound semiconductor layer, and the second GaN-based compound semiconductor layer, wherein the GaN-based compound semiconductor layer, the composition of which contains indium, in the undoped GaN-based compound semiconductor layer disposed on the third GaN-based compound semiconductor layer is formed at a higher temperature than the temperature at which the GaN-based compound semiconductor layer, the composition of which contains indium, in the active layer is formed. |
| Claim: |
32. A method of driving a GaN-based semiconductor light-emitting element which includes a first GaN-based compound semiconductor layer of n-conductivity type; an active layer; a second GaN-based compound semiconductor layer of p-conductivity type; a first electrode electrically connected to the first GaN-based compound semiconductor layer; a second electrode electrically connected to the second GaN-based compound semiconductor layer; an impurity diffusion-preventing layer composed of an undoped GaN-based compound semiconductor, the impurity diffusion-preventing layer preventing a p-type impurity from diffusing into the active layer; and a laminated structure, wherein the impurity diffusion-preventing layer and the laminated structure are disposed, between the active layer and the second GaN-based compound semiconductor layer, in that order from the active layer side, and the laminated structure includes at least one laminate unit in which a GaN-based compound semiconductor layer of p-conductivity type and an undoped GaN-based compound semiconductor layer are stacked in that order from the active layer side, the method comprising: applying a current with a current density of 50 amperes/cm2 or more to the active layer. |
| Claim: |
33. A method of driving a GaN-based semiconductor light-emitting element which includes a first GaN-based compound semiconductor layer of n-conductivity type; an active layer; a second GaN-based compound semiconductor layer of p-conductivity type; a first electrode electrically connected to the first GaN-based compound semiconductor layer; a second electrode electrically connected to the second GaN-based compound semiconductor layer; an impurity diffusion-preventing layer composed of an undoped GaN-based compound semiconductor, the impurity diffusion-preventing layer preventing a p-type impurity from diffusing into the active layer; and a third GaN-based compound semiconductor layer of p-conductivity type, wherein the impurity diffusion-preventing layer and the third GaN-based compound semiconductor layer are disposed, between the active layer and the second GaN-based compound semiconductor layer, in that order from the active layer side, and at least one undoped GaN-based compound semiconductor layer is disposed on a side, closer to the second GaN-based compound semiconductor layer, of the third GaN-based compound semiconductor layer, the method comprising: applying a current with a current density of 50 amperes/cm2 or more to the active layer. |
| Claim: |
34. An image display apparatus comprising a GaN-based semiconductor light-emitting element for displaying an image, wherein the GaN-based semiconductor light-emitting element includes a first GaN-based compound semiconductor layer of n-conductivity type; an active layer; a second GaN-based compound semiconductor layer of p-conductivity type; a first electrode electrically connected to the first GaN-based compound semiconductor layer; a second electrode electrically connected to the second GaN-based compound semiconductor layer; an impurity diffusion-preventing layer composed of an undoped GaN-based compound semiconductor, the impurity diffusion-preventing layer preventing a p-type impurity from diffusing into the active layer; and a laminated structure, wherein the impurity diffusion-preventing layer and the laminated structure are disposed, between the active layer and the second GaN-based compound semiconductor layer, in that order from the active layer side, and the laminated structure includes at least one laminate unit in which a GaN-based compound semiconductor layer of p-conductivity type and an undoped GaN-based compound semiconductor layer are stacked in that order from the active layer side. |
| Claim: |
35. An image display apparatus comprising a GaN-based semiconductor light-emitting element for displaying an image, wherein the GaN-based semiconductor light-emitting element includes a first GaN-based compound semiconductor layer of n-conductivity type; an active layer; a second GaN-based compound semiconductor layer of p-conductivity type; a first electrode electrically connected to the first GaN-based compound semiconductor layer; a second electrode electrically connected to the second GaN-based compound semiconductor layer; an impurity diffusion-preventing layer composed of an undoped GaN-based compound semiconductor, the impurity diffusion-preventing layer preventing a p-type impurity from diffusing into the active layer; and a third GaN-based compound semiconductor layer of p-conductivity type, wherein the impurity diffusion-preventing layer and the third GaN-based compound semiconductor layer are disposed, between the active layer and the second GaN-based compound semiconductor layer, in that order from the active layer side, at least one undoped GaN-based compound semiconductor layer is disposed on a side, closer to the second GaN-based compound semiconductor layer, of the third GaN-based compound semiconductor layer. |
| Current U.S. Class: |
315/291 |
| Current International Class: |
05; 01; 01 |
| رقم الانضمام: |
edspap.20090230878 |
| قاعدة البيانات: |
USPTO Patent Applications |