التفاصيل البيبلوغرافية
| العنوان: |
Solid state imaging device, manufacturing method of the same, and substrate for solid state imaging device |
| Document Number: |
20090206435 |
| تاريخ النشر: |
August 20, 2009 |
| Appl. No: |
12/385969 |
| Application Filed: |
April 24, 2009 |
| مستخلص: |
A method of manufacturing a solid state imaging device having photoelectric conversion devices, the method including: 1) forming a plurality of color filters differing in color from each other, 2) forming a transparent resin layer on the color filters, 3) forming an etching control layer on the transparent resin layer, the etching control layer being enabled to be etched at a different etching rate from the etching rate of the transparent resin layer, 4) forming a lens master on the etching control layer by using a heatflowable resin material, 5) transferring a pattern of the lens master to the etching control layer by dry etching to form an intermediate micro lens, and 6) transferring a pattern of the intermediate micro lens to the transparent resin layer by dry etching to form the transfer lenses. |
| Inventors: |
Fukuyoshi, Kenzo (Tokyo, JP); Ishimatsu, Tadashi (Tokyo, JP); Ogata, Keisuke (Tokyo, JP); Nakao, Mitsuhiro (Tokyo, JP); Ushibori, Akiko (Tokyo, JP) |
| Assignees: |
TOPPAN PRINTING CO., LTD. (Tokyo, JP) |
| Claim: |
1. A solid state imaging device comprising: photoelectric conversion devices which are arranged two-dimensionally; color filters each disposed corresponding to each of the photoelectric conversion devices; and a plurality of transfer lenses each disposed directly or indirectly on the color filter, wherein the gap between neighboring transfer lenses among said plurality of transfer lenses is not more than 0.035 μm, and the contact length between neighboring transfer lenses disposed at a gap of not more than 0.035 μm is confined within the range of 3-80% of the pitch of said plurality of transfer lenses, and the transfer lenses, and the transfer lenses are formed by a method comprising forming a plurality of color filters differing in color from each other; forming a transparent resin layer on the color filters; forming an etching control layer on the transparent resin layer, the etching control layer being enabled to be etched at a different etching rate from the etching rate of the transparent resin layer; forming a lens master on the etching control layer by using a heat-flowable resin material; transferring a pattern of the lens master to the etching control layer by dry etching to form an intermediate micro lens; and transferring a pattern of the intermediate micro lens to the transparent resin layer by dry etching to form the transfer lenses. |
| Claim: |
2. The solid state imaging device according to claim 1, wherein the transfer lenses have a surface roughness of 50 nm or less. |
| Claim: |
3. The solid state imaging device according to claim 1, wherein the transfer lenses contain not less than 0.2% of a compound having a refractive index of 1.47 or less. |
| Claim: |
4. The solid state imaging device according to claim 3, wherein the compound having a refractive index of 1.47 or less is a fluorine compound or a silicon compound. |
| Claim: |
5. The solid state imaging device according to claim 1, wherein the transfer lenses respectively has a peripheral portion which is constituted by an upper portion of the color filter. |
| Current U.S. Class: |
257/432 |
| Current International Class: |
01 |
| رقم الانضمام: |
edspap.20090206435 |
| قاعدة البيانات: |
USPTO Patent Applications |