التفاصيل البيبلوغرافية
| العنوان: |
GROUP-III NITRIDE VERTICAL-RODS SUBSTRATE |
| Document Number: |
20070272914 |
| تاريخ النشر: |
November 29, 2007 |
| Appl. No: |
11/552527 |
| Application Filed: |
October 25, 2006 |
| مستخلص: |
The invention is directed to a group-III nitride vertical-rods substrate. The group-III vertical-rods substrate comprises a substrate, a buffer layer and a vertical rod layer. The buffer layer is located over the substrate. The vertical rod layer is located on the buffer layer and the vertical rod layer is comprised of a plurality of vertical rods standing on the buffer layer. |
| Inventors: |
Lai, Chih-Ming (Pingtung County, TW); Liu, Wen-Yueh (Taipei City, TW); Tsay, Jenq-Dar (Kaohsiung City, TW); Hsu, Jung-Tsung (Hsinchu City, TW); Gwo, Shang-Jr (Hsinchu City, TW); Shen, Chang-Hong (Yilan County, TW); Lin, Hon-Way (Taipei City, TW) |
| Assignees: |
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (Hsinchu, TW), NATIONAL TSING HUA UNIVERSITY (Hsinchu, TW) |
| Claim: |
1. A group-III nitride vertical-rods substrate, comprising: a substrate; a buffer layer located over the substrate; and a vertical rod layer located on the buffer layer, wherein the vertical rod layer is comprised of a plurality of vertical rods standing on the buffer layer. |
| Claim: |
2. The group-III nitride vertical-rods substrate of claim 1, wherein the material of each of the vertical rod includes group-III nitride. |
| Claim: |
3. The group-III nitride vertical-rods substrate of claim 1, wherein the material of each of the vertical rod includes gallium nitride. |
| Claim: |
4. The group-III nitride vertical-rods substrate of claim 1, wherein the buffer layer is a complex layer. |
| Claim: |
5. The group-III nitride vertical-rods substrate of claim 4, wherein the complex layer includes a silicon nitride/group-III nitride layer. |
| Claim: |
6. The group-III nitride vertical-rods substrate of claim 4, wherein the thickness of the buffer layer is about 1˜60 nano meters. |
| Claim: |
7. The group-III nitride vertical-rods substrate of claim 1, wherein the material of the buffer layer includes silicon nitride. |
| Claim: |
8. The group-III nitride vertical-rods substrate of claim 7, wherein the thickness of the buffer layer is less than 10 nano meters. |
| Claim: |
9. The group-III nitride vertical-rods substrate of claim 1, wherein a diameter of a cross-section of each of the vertical rods is about 60˜150 nano meters. |
| Claim: |
10. The group-III nitride vertical-rods substrate of claim 1 further comprising a group-III nitride layer located on the vertical rod layer. |
| Claim: |
11. The group-III nitride vertical-rods substrate of claim 1, wherein the thickness of the vertical rod layer is about 10 nano meters˜5 micro meters. |
| Claim: |
12. The group-III nitride vertical-rods substrate of claim 1, wherein the distribution density of the vertical rods of the vertical rod layer over the substrate is about 109/cm2˜1012/cm2. |
| Claim: |
13. A group-III nitride vertical-rods substrate, comprising: a substrate; a vertical rod layer on the substrate, wherein the vertical rod layer is comprised of a plurality of monomorphism vertical rods; and a group III nitride semiconductor layer on the vertical rod layer. |
| Claim: |
14. The group-III nitride vertical-rods substrate of claim 13 further comprising a silicon nitride buffer layer located between the substrate and the vertical rod layer. |
| Claim: |
15. The group-III nitride vertical-rods substrate of claim 14, wherein the thickness of the silicon nitride layer is less than 10 nano meters. |
| Claim: |
16. The group-III nitride vertical-rods substrate of claim 14, wherein a sub-buffer layer is located between the silicon nitride buffer layer and the vertical rod layer. |
| Claim: |
17. The group-III nitride vertical-rods substrate of claim 16, wherein the thickness of the sub-buffer layer is about 1˜50 nano meters. |
| Claim: |
18. The group-III nitride vertical-rods substrate of claim 16, wherein the material of the sub-buffer layer includes group-III nitride. |
| Claim: |
19. The group-III nitride vertical-rods substrate of claim 13, wherein the material of each of the vertical rod includes group-III nitride. |
| Claim: |
20. The group-III nitride vertical-rods substrate of claim 13, wherein the material of each of the vertical rods includes gallium nitride. |
| Claim: |
21. The group-III nitride vertical-rods substrate of claim 13, wherein the thickness of the vertical rod layer is about 10 nano meters˜5 micro meters. |
| Claim: |
22. The group-III nitride vertical-rods substrate of claim 13, wherein the distribution density of the vertical rods of the vertical rod layer over the substrate is about 109/cm2˜1012/cm2. |
| Claim: |
23. The group-III nitride vertical-rods substrate of claim 13, wherein a diameter of a cross-section of each of the vertical rods is about 60˜150 nano meters. |
| Current U.S. Class: |
257/9 |
| Current International Class: |
01 |
| رقم الانضمام: |
edspap.20070272914 |
| قاعدة البيانات: |
USPTO Patent Applications |