التفاصيل البيبلوغرافية
| العنوان: |
ORGANIC THIN FILM TRANSISTOR USING ULTRA-THIN METAL OXIDE AS GATE DIELECTRIC AND FABRICATION METHOD THEREOF |
| Document Number: |
20070181871 |
| تاريخ النشر: |
August 9, 2007 |
| Appl. No: |
11/279850 |
| Application Filed: |
April 14, 2006 |
| مستخلص: |
The present invention provides a low-voltage organic thin film transistor having a gate dielectric layer of ultra-thin metal oxide self-grown on a metal gate electrode by O2 plasma process. The metal gate electrode is deposited on a plastic or glass substrate. By directly oxidizing the gate electrode by using O2 plasma process, the gate dielectric layer of metal oxide is formed with a thickness of several nanometers on the gate electrode. The organic semiconductor layer is deposited on the gate dielectric layer, and source/drain electrodes are formed on the organic semiconductor layer. Before the organic semiconductor layer is formed, an organic molecular monolayer may be formed on the gate dielectric layer by using molecular self-assembly technique. The gate dielectric layer may be formed at room temperature to about 100° C. |
| Inventors: |
Song, Chung Kun (Busan, KR); Kim, Kang Dae (Busan, KR); Ryu, Gi Seong (Busan, KR); Xu, Yong Xian (Busan, KR); Kim, Kwang Hyun (Busan, KR); Lee, Myung Won (Busan, KR) |
| Claim: |
1. An organic thin film transistor comprising: a substrate; a gate electrode formed on the substrate, wherein the gate electrode is made of metal that can be oxidized; an ultra-thin gate dielectric layer formed on the gate electrode, wherein the gate dielectric layer is made of metal oxide that is self-grown on the gate electrode by O2 plasma process; an organic semiconductor layer formed on the gate dielectric layer; and source/drain electrodes formed on the organic semiconductor layer, wherein the source/drain electrodes are spaced apart from each other. |
| Claim: |
2. The organic thin film transistor of claim 1, wherein the substrate is made of plastic or glass. |
| Claim: |
3. The organic thin film transistor of claim 1, wherein the gate electrode is made of aluminum and the gate dielectric layer is aluminum oxide. |
| Claim: |
4. The organic thin film transistor of claim 1, wherein the gate dielectric layer is formed at room temperature to about 100° C. |
| Claim: |
5. The organic thin film transistor of claim 1, wherein the gate dielectric layer has a thickness of several nanometers. |
| Claim: |
6. The organic thin film transistor of claim 1, further comprising: an organic molecular monolayer interposed between the gate dielectric layer and the organic semiconductor layer, wherein the organic molecular monolayer is formed by molecular self-assembly technique. |
| Claim: |
7. The organic thin film transistor of claim 6, wherein the organic molecular monolayer is made of (Benzyloxy)alkyltrimethoxysilane. |
| Claim: |
8. A method of fabricating an organic thin film transistor, the method comprising: depositing a gate electrode with pattern on a substrate, wherein the gate electrode is made of metal capable of being oxidized; directly oxidizing the gate electrode by using O2 plasma process such that an ultra-thin gate dielectric layer is formed of metal oxide self-grown on the gate electrode; depositing an organic semiconductor layer on the gate dielectric layer; and forming source/drain electrodes on the organic semiconductor layer such that the source/drain electrodes are spaced apart from each other. |
| Claim: |
9. The method of claim 8, wherein the substrate is made of plastic or glass. |
| Claim: |
10. The method of claim 8, wherein the gate electrode is made of aluminum and the gate dielectric layer is aluminum oxide. |
| Claim: |
11. The method of claim 8, wherein the gate dielectric layer is formed at room temperature to about 100° C. |
| Claim: |
12. The method of claim 8, wherein the gate dielectric layer has a thickness of several nanometers. |
| Claim: |
13. The method of claim 8, further comprising: before the depositing of the organic semiconductor layer, forming an organic molecular monolayer on the gate dielectric layer by using molecular self-assembly technique. |
| Claim: |
14. The method of claim 13, wherein the organic molecular monolayer is made of (Benzyloxy)alkyltrimethoxysilane. |
| Current U.S. Class: |
257040/000 |
| Current International Class: |
01; 01; 01 |
| رقم الانضمام: |
edspap.20070181871 |
| قاعدة البيانات: |
USPTO Patent Applications |