التفاصيل البيبلوغرافية
| العنوان: |
Cathode substrate and its manufacturing method |
| Document Number: |
20050230750 |
| تاريخ النشر: |
October 20, 2005 |
| Appl. No: |
11/066562 |
| Application Filed: |
February 28, 2005 |
| مستخلص: |
A cathode substrate according to the present invention comprises a cathode electrode layer(12), insulator layer(14) and gate electrode layer(15) formed sequentially on a substrate to be processed (11). The insulator layer includes a hole (14a) formed there through. A gate aperture (16) is formed through the gate electrode layer. An emitter (E) is then provided at the bottom of the hole (14a). In this case, the gate aperture comprises a plurality of openings (16a), the total area of which is smaller than the area of top opening of the hole in the insulator layer. The openings are arranged densely at a position opposite to the emitter and just above the hole of the insulator layer. |
| Inventors: |
Nakano, Haruhisa (Ibaraki-ken, JP); Hirakawa, Masaaki (Ibaraki-ken, JP); Miura, Osamu (Ibaraki-ken, JP); Murakami, Hirohiko (Ibaraki-ken, JP); Okasaka, Kensuke (Saitama-ken, JP); Kojima, Tomoaki (Saitama-ken, JP) |
| Claim: |
1. A cathode substrate comprising: a cathode electrode layer formed on a substrate to be processed; a insulator layer formed on the cathode layer, said insulator layer including an emitter located at the bottom of a hole formed therein; and a gate electrode layer formed on the insulator layer, said gate electrode layer including a gate aperture formed therethrough, said gate aperture consisting of a plurality of openings, the total area of which is smaller than the area of top opening of the hole in said insulator layer, said openings being arranged densely at a position opposite to the emitter and just above the hole of the insulator layer. |
| Claim: |
2. A cathode substrate according to claim 1, wherein the efficiency of charge injection to an anode substrate to be disposed opposite to said cathode substrate to form the field emitter with the triode structure is changed by increasing or decreasing at least one of the area of each opening and the number of openings. |
| Claim: |
3. A cathode substrate according to claim 1 or 2, wherein said emitter is formed of a carbon group emitter material and that the carbon group emitter material is grown on a catalyst layer. |
| Claim: |
4. A cathode substrate manufacturing method comprises the steps of: forming a cathode electrode layer on a substrate to be processed; forming insulator layer on said cathode electrode layer; forming gate electrode layer on said insulator layer; providing a resist pattern on said gate electrode layer before the resist pattern and the gate electrode layer are etched to form a gate aperture consisting of a plurality of openings; etching said insulator layer through said gate aperture both in the directions of depth and width to form a single hole, the openings of said gate aperture being arranged densely at a position just above said hole; and providing an emitter at the bottom of the hole. |
| Claim: |
5. A cathode substrate manufacturing method according to claim 4, wherein said emitter is formed of a carbon group emitter material and that a catalyst layer acting as a catalyst as said carbon group emitter material is being grown is previously formed underside of said insulator layer. |
| Claim: |
6. A cathode substrate manufacturing method according to claim 4, wherein said emitter is formed of a carbon group emitter material and that after the insulator layer has been etched, the catalyst layer acting as a catalyst as the carbon group emitter material is being grown is formed through the lift-off method and that a carbon group emitter is grown at the bottom of the hole through CVD method or a carbon group emitter is applied on the bottom of the hole through printing method. |
| Current U.S. Class: |
257341/000 |
| رقم الانضمام: |
edspap.20050230750 |
| قاعدة البيانات: |
USPTO Patent Applications |