Electronic Resource
Quantum Emitter Formation Dynamics and Probing of Radiation-Induced Atomic Disorder in Silicon
| العنوان: | Quantum Emitter Formation Dynamics and Probing of Radiation-Induced Atomic Disorder in Silicon |
|---|---|
| المؤلفون: | Universidad de Sevilla. Departamento de Física Atómica, Molecular y Nuclear, Department of Energy. United States, Liu, Wei, Ivanov, Vsevolod, Jhuria, Kaushalya, Ji, Qing, Persaud, Arun, Redjem, Walid, Simoni, Jacopo, Zhiyenbayev, Yertay, Kante, Boubacar, García López, Francisco Javier, Tan, Liang Z., Schenkel, Thomas |
| بيانات النشر: | American Physical Society 2023-07-26 |
| نوع الوثيقة: | Electronic Resource |
| مستخلص: | Near-infrared color centers in silicon are emerging candidates for on-chip integrated quantum emitters, optical-access quantum memories, and sensing. We access ensemble G-color-center formation dynamics and radiation-induced atomic disorder in silicon for a series of megaelectronvolt proton-flux conditions. The photoluminescence results reveal that the G centers are formed more efficiently by pulsed-proton irradiation than by continuous-wave proton irradiation. The enhanced transient excitations and dynamic annealing within nanoseconds allows optimization of the ratio of G-center formation to nonradiative defect accumulation. The G centers preserve narrow line widths of about 0.1 nm when they are generated by moderate pulsed-proton fluences, while the line width broadens significantly as the pulsed-proton fluence increases. This implies vacancy or interstitial clustering by overlapping collision cascades. The tracking of G-center properties for a series of irradiation conditions enables sensitive probing of atomic disorder, serving as a complementary analytical method for sensing damage accumulation. Aided by ab initio electronic structure calculations, we provide insight into the atomic disorder induced inhomogeneous broadening by introducing vacancies, silicon interstitials, and oriented strain fields in the vicinity of a G center. A vacancy leads to a tensile strain and can result in either a red shift or a blue shift of the G-center emission, depending on its position relative to the G center. Meanwhile, Si interstitials lead to compressive strain, which results in a monotonic red shift. High-flux and tunable ion pulses enable the exploration of the fundamental dynamics of radiation-induced defects as well as methods for the optimization of G-center formation and qubit synthesis for quantum information processing. |
| مصطلحات الفهرس: | info:eu-repo/semantics/article |
| URL: | Physical Review Applied, 20 (1), 014058. DE-AC02-05CH11231 |
| الاتاحة: | Open access content. Open access content info:eu-repo/semantics/openAccess |
| ملاحظة: | English |
| Other Numbers: | SUE oai:idus.us.es:11441/161972 Liu, W., Ivanov, V., Jhuria, K., Ji, Q., Persaud, A., Redjem, W.,...,Schenkel, T. (2023). Quantum Emitter Formation Dynamics and Probing of Radiation-Induced Atomic Disorder in Silicon. Physical Review Applied, 20 (1), 014058. https://doi.org/10.1103/PhysRevApplied.20.014058. 2331-7019 10.1103/PhysRevApplied.20.014058 1453276512 |
| المصدر المساهم: | UNIV DE SEVILLA From OAIster®, provided by the OCLC Cooperative. |
| رقم الانضمام: | edsoai.on1453276512 |
| قاعدة البيانات: | OAIster |
| الوصف غير متاح. |