Electronic Resource
Stoichlometry control over a wide composition range of sputtered CuGa_(x)In_(1-x)Se_(2)
| العنوان: | Stoichlometry control over a wide composition range of sputtered CuGa_(x)In_(1-x)Se_(2) |
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| المؤلفون: | Mártil de la Plaza, Ignacio, González Díaz, Germán, Hernández Rojas, J.L., Lucía Mulas, María Luisa, Santamaría Sánchez-Barriga, Jacobo, Sánchez Quesada, Francisco |
| بيانات النشر: | American Institute of Physics 2023-06-20T19:08:41Z 2023-06-20T19:08:41Z 1994-03-07 |
| نوع الوثيقة: | Electronic Resource |
| مستخلص: | © American Institute of Physics. This work was partially supported by the European Communities under Contract JOU2-CT92-0141. Films of CuGaxIn(1-x)Se2 (CGIS) have been grown by rf sputtering from stoichiometric single targets with different Ga/In ratios. Adjusting growth temperature and argon pressure we are able to deposit films with a wide range of Cu contents: From CGIS Cu-poor (16 at. %) to Cu2Se. Reevaporation of (Ga,In)2Se3 binaries is observed when substrate temperature is increased at a constant argon pressure (20 mTorr). An increase in Ar pressure from 5 to 150 mTorr at a growth temperature of 450-degrees-C, produces a decrease in Cu atomic percentage from 24% to 16% due to a preferential diffusion of Cu sputtered atoms in the plasma. The relevant film properties of the analyzed films are found to be ruled by the Cu content. Graded composition absorbers with adequate physical properties for the fabrication of photovoltaic devices are grown with a proper choice of growth parameters. European Communities Depto. de Estructura de la Materia, Física Térmica y Electrónica Fac. de Ciencias Físicas TRUE pub |
| مصطلحات الفهرس: | 537, Thin-Films., Electricidad, Electrónica (Física), 2202.03 Electricidad, journal article |
| URL: | JOU2-CT92-0141 |
| الاتاحة: | Open access content. Open access content open access |
| ملاحظة: | application/pdf 0003-6951 English |
| Other Numbers: | ESRCM oai:docta.ucm.es:20.500.14352/59308 1) L. Stolt, J. Hedstriim, J. Kessler, M. Ruckh, K. Velthaus, and H. Schock, Appl. Phys. Lett., 62, 597 (1993). 2) K.W. Mitchell, C. Eberspacher, J. Ermer, and D. Pier, Proceedings of the 20th IEEE Photovoltaic Specialist Conference (IEEE, New York, 1988), p. 1384. 3) J.L. Hernández-Rojas, M.L. Lucía, I. Mártil, J. Santamaría, G. González-Díaz, and F. Sánchez-Quesada, Appl. Phys. Lett., 60, 1875 (1992). 4) J.L. Hernández-Rojas, M.L. Lucía, I. Mártil, G. González-Díaz, J. Santamaría, and F. Sánchez-Quesada, Appl. Opt., 31, 1606 (1992). 5) A. Rockett, T.C. Lommasson, L.C. Yang, H. Talien, P. Campos, and J.A. Thornton, Proceedings of the 20th IEEE Photovoltaic Specialist Conference (IEEE, New York, 1989), p. 1505. 6) D.S. Albin, J.R. Tuttle, G.D. Mooney, J.J. Carapella, A. Duda, A. Mason, and R. Noufi, Proceedings of the 21st IEEE Phocovoltaic Specialist Conference (IEEE, New York, 1990), p. 562. 7) J.R Tuttle, D.S. Albin, and R. Noufi, Sol. Cells, 30, 21 (1991). 8) T. Walter and H.W. Shock, Thin Solid Films, 224, 74 (1993). 0003-6951 10.1063/1.110851 1413946091 |
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| رقم الانضمام: | edsoai.on1413946091 |
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