Electronic Resource

Carrier dynamics of silicon vacancies of SiC under simultaneous optically and electrically excitations

التفاصيل البيبلوغرافية
العنوان: Carrier dynamics of silicon vacancies of SiC under simultaneous optically and electrically excitations
المؤلفون: Yuichi, Yamazaki, Yoji, Chiba, Shinichiro, Sato, Takahiro, Makino, Naoto, Yamada, Takahiro, Sato, Kojima, Kazutoshi, Hijikata, Yasuto, Tsuchida, Hidekazu, Hoshino, Norihiro, Sang-Yun, Lee, Takeshi, Ohshima, Takahiro, Satoh
بيانات النشر: AIP Publishing 2021-01
نوع الوثيقة: Electronic Resource
مستخلص: Silicon carbide (SiC) is an important wide bandgap semiconductor used for diverse applications from heat spreading to high-power electronics. It is readily doped, has high thermal conductivity, and is used for application in mature device fabrication techniques. To improve the performance of SiC electronic devices, built-in sensors, which should ideally be inexpensive integrated with the device, and not perturb device operations, are quite useful. Here, we studied the optical properties of the negatively silicon vacancy under simultaneous optical and electrical excitation to uncover the carrier dynamics, as the luminescence intensity is determined by competition between the two excitation pathways. We also observe optically detected magnetic resonance (ODMR) and observe that the ODMR contrast is decreased by injected current, which is consistent with the decrease in the pumping rate of optical excitation in the competitive process. Our studies show that an embedded quantum sensor is possible in practical SiC devices, opening new opportunities for device control and optimization.
مصطلحات الفهرس: Journal Article
URL: https://repo.qst.go.jp/records/81971
https://doi.org/10.1063/5.0028318
https://aip.scitation.org/doi/full/10.1063/5.0028318
https://doi.org/10.1063/5.0028318
https://aip.scitation.org/doi/full/10.1063/5.0028318
الاتاحة: Open access content. Open access content
metadata only access
ملاحظة: English
Other Numbers: JPNII oai:irdb.nii.ac.jp:01116:0004776793
0021-8979
Applied Physics Letters, 118, 021106-
1375207235
المصدر المساهم: NATIONAL INST OF INFO
From OAIster®, provided by the OCLC Cooperative.
رقم الانضمام: edsoai.on1375207235
قاعدة البيانات: OAIster