Electronic Resource
Improved InGaAs Metal-Semiconductor-Metal OE Mixers Using Submicron Schottky Contacts
| العنوان: | Improved InGaAs Metal-Semiconductor-Metal OE Mixers Using Submicron Schottky Contacts |
|---|---|
| المؤلفون: | FLORIDA UNIV GAINESVILLE, Mehandru, Rishabh, Aliberti, Keith, Shen, Hongen, Jang, Soohwan, Pearton, S. J., Ren, Fan |
| المصدر: | DTIC AND NTIS |
| بيانات النشر: | 2004-12 |
| نوع الوثيقة: | Electronic Resource |
| مستخلص: | InGaAs-based Metal Semiconductor Metal (MSM) Photodetectors were fabricated and tested as photodetectors and Opto-electronic mixers. A comparison of various processing schemes for MSM InAlAs/InGaAs photodetectors on InP substrates was conducted to minimize the dark current. InAlAs Schottky Enhanced Layers (SEL) was employed on the InGaAs-based MSMs to enhance the barrier height to reduce the dark current. The effect of SEL thickness on the performance of OE mixer was studied. The experimental results were compared to those simulated with CFDRC software. See also ADM001736, Proceedings for the Army Science Conference (24th) held in Orlando, FL on 29 Nov-2 Dec 2005. The original document contains color images. |
| مصطلحات الفهرس: | Electrical and Electronic Equipment, Electrooptical and Optoelectronic Devices, ELECTROOPTICS, PHOTODETECTORS, MIXERS(ELECTRONICS), INDIUM GALLIUM ARSENIDES, THICKNESS, SYMPOSIA, SUBSTRATES, SEMICONDUCTORS, SCHOTTKY BARRIER DEVICES., COMPONENT REPORTS, DARK CURRENT, Text |
| URL: | |
| الاتاحة: | Open access content. Open access content Approved for public release; distribution is unlimited., Availability: This document is not available from DTIC in microfiche. |
| ملاحظة: | text/html English |
| Other Numbers: | DTICE ADA433466 834280896 |
| المصدر المساهم: | From OAIster®, provided by the OCLC Cooperative. |
| رقم الانضمام: | edsoai.ocn834280896 |
| قاعدة البيانات: | OAIster |
| الوصف غير متاح. |