التفاصيل البيبلوغرافية
| العنوان: |
High-performance zinc oxide thin-film transistors for large area electronics |
| المؤلفون: |
Bashir, Aneeqa |
| Thesis Advisors: |
Anthopoulos, Thomas ; Bradley, Donal |
| بيانات النشر: |
Imperial College London, 2011. |
| سنة النشر: |
2011 |
| المجموعة: |
Ethos UK |
| Original Material: |
http://hdl.handle.net/10044/1/8995 |
| مصطلحات موضوعية: |
530.417 |
| الوصف: |
The increasing demand for high performance electronics that can be fabricated onto large area substrates employing low manufacturing cost techniques in recent years has fuelled the development of novel semiconductor materials such as organics and metal oxides, with tailored physical characteristics that are absent in their traditional inorganic counterparts such as silicon. Metal oxide semiconductors, in particular, are highly attractive for implementation into thin-film transistors because of their high charge carrier mobility, optical transparency, excellent chemical stability, mechanical stress tolerance and processing versatility. This thesis focuses on the development of high performance transistors based on zinc oxide (ZnO) semiconducting films grown by spray pyrolysis (SP), a low cost and highly scalable method that has never been used before for the manufacturing of oxide-based thin-film transistors. The physical properties of as-grown ZnO films have been studied using a range of techniques. Despite the simplicity of SP, as-fabricated transistors exhibit electrical characteristics comparable to those obtained from ZnO devices produced using highly sophisticated deposition processes. In particular, electron mobility up to 25 cm2/Vs has been achieved in transistors based on pristine ZnO films grown at 400 °C onto Si/SiO2 substrates utilising aluminium source-drain (S-D) electrodes. A strong dependence of the saturation mobility on the work function of S-D electrodes and the transistor channel length (L) has been established. Short channel transistors are found to exhibit improved performance as compared to long channel ones. This was attributed to grain boundary effects that tend to dominate charge transport in devices with L < 40 μm. High mobility, low operating voltage |
| Original Identifier: |
oai:ethos.bl.uk:540648 |
| نوع الوثيقة: |
Electronic Thesis or Dissertation |
| الاتاحة: |
http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.540648 |
| رقم الانضمام: |
edsndl.bl.uk.oai.ethos.bl.uk.540648 |
| قاعدة البيانات: |
Networked Digital Library of Theses & Dissertations |