Dissertation/ Thesis
Design and Fabrication of Wafer Level Dual-Mode Thin Film Bulk Acoustic Filters
| العنوان: | Design and Fabrication of Wafer Level Dual-Mode Thin Film Bulk Acoustic Filters |
|---|---|
| المؤلفون: | Li, Jia-Ming |
| Thesis Advisors: | Meng-Chyi Wu, Ying-chung Chen, Mau-Phon Houng, Chien-Chuan Cheng, Shoou-Jinn Chang |
| بيانات النشر: | NSYSU, 2011. |
| سنة النشر: | 2011 |
| المجموعة: | NSYSU Electronic Thesis and Dissertation Archive |
| Original Material: | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0809111-220711 |
| مصطلحات موضوعية: | Zinc oxide, Dual-mode filters, Bulk acoustic wave, Wafer, Ladder-type filter |
| الوصف: | This study describes the design and fabrication of dual-mode film bulk acoustic resonator (TFBAR) devices to construct wafer level T-ladder type filters. Reactive radio-frequency (RF) magnetron sputtering method was used to deposit c-axis- tilted ZnO piezoelectric thin films. The piezoelectric ZnO thin films were deposited by a two-step method at room temperature with off-axis. In this investigation, off-axis distance was varied to determine the optimal growth parameters of the tilted piezoelectric thin film. The SEM and XRD analysis reveal that ZnO thin films deposited at off-axis distances of 35 mm yielded a highly textured and sufficiently-tilted ZnO piezoelectric layer for dual-mode TFBAR. Additionally, the ZnO piezoelectric layer with off-axis distances of 35 mm exhibited enhanced competitive growth, and had a c-axis-tilted angle of 5¢X. To explore the relationship between the c-axis-tilted angle and the dual-mode resonance frequency responses (fL and fS) of TFBAR, two TFBAR devices were fabricated with ZnO c-axis tilted at 4.4¢X and 5¢X, respectively. The TFBAR device with 5¢X-tilted ZnO layer exists shear and longitudinal resonant modes. The center-frequency of longitudinal resonant mode is 2.2 times that of the shear resonant mode. The longitudinal mode is suitable for designing as a communication receiver (Rx) device at WCDMA band. On the other hand, the shear mode of TFBAR is suitable for EGSM-900 band. To optimize the characteristics, the filter was annealed by CTA treatment in 400 ¢J. For the frequency responses of the longitudinal wave, the insertion loss was upgraded from -5.77 dB without annealing to -4.85 dB as annealed, the band rejection was reduced from 13.57 dB to 12.65 dB, the bandwidth was broaden from 69.69 MHz to 73.12 MHz. On the other hand, for the frequency responses of the shear wave, the insertion loss was upgraded from -9.94 dB to -8.21 dB, the band rejection was reduced from 13.74 dB to 13 dB, the bandwidth was decreased from 28.13 MHz to 28.12 MHz. |
| Original Identifier: | oai:NSYSU:etd-0809111-220711 |
| نوع الوثيقة: | Text |
| وصف الملف: | application/pdf |
| الاتاحة: | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0809111-220711 |
| Rights: | user_define Copyright information available at source archive |
| رقم الانضمام: | edsndl.NSYSU.oai.NSYSU.etd.0809111.220711 |
| قاعدة البيانات: | Networked Digital Library of Theses & Dissertations |
| الوصف غير متاح. |