Fabrication technologies of Si/SiGe hole-tunneling RTD formed by sputter epitaxy and its characteristic control

التفاصيل البيبلوغرافية
العنوان:	Fabrication technologies of Si/SiGe hole-tunneling RTD formed by sputter epitaxy and its characteristic control / スパッタエピタキシー法を用いたSi/SiGe 正孔トンネル型RTDの作製技術と特性制御
المؤلفون:	Minoru Wakiya, Takahiro Tsukamoto, Yoshiyuki Suda, 塚本貴広, 脇谷実, 須田良幸
المصدر:	JSAP Annual Meetings Extended Abstracts. 2018, :3172
قاعدة البيانات:	J-STAGE

الوصف
تدمد:	24367613
DOI:	10.11470/jsapmeeting.2018.1.0_3172