Academic Journal
A Moderate Confinement O-, S-, C-, and L-Band Silicon Nitride Platform Enabled by a Rapid Prototyping Integrated Photonics Foundry Process
| العنوان: | A Moderate Confinement O-, S-, C-, and L-Band Silicon Nitride Platform Enabled by a Rapid Prototyping Integrated Photonics Foundry Process |
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| المؤلفون: | Cameron M. Naraine, Batoul Hashemi, Niloofar Majidian Taleghani, Jocelyn N. Westwood-Bachman, Cameron Horvath, Bruno L. Segat Frare, Hamidu M. Mbonde, Pooya Torab Ahmadi, Kevin Setzer, Alexandria McKinlay, Khadijeh Miarabbas Kiani, Renjie Wang, Ponnambalam Ravi Selvaganapathy, Peter Mascher, Andrew P. Knights, Jens H. Schmid, Pavel Cheben, Mirwais Aktary, Jonathan D. B. Bradley |
| المصدر: | IEEE Photonics Journal, Vol 16, Iss 6, Pp 1-15 (2024) |
| بيانات النشر: | IEEE, 2024. |
| سنة النشر: | 2024 |
| المجموعة: | LCC:Applied optics. Photonics LCC:Optics. Light |
| مصطلحات موضوعية: | Integrated optics, nanophotonics, optical device fabrication, optical waveguides, photonic integrated circuits, rapid prototyping, Applied optics. Photonics, TA1501-1820, Optics. Light, QC350-467 |
| الوصف: | We describe a rapid prototyping process for silicon nitride photonic integrated circuits operating at wavelengths around 1.3 and 1.5 μm. Moderate confinement silicon nitride waveguides and other essential integrated photonic components, such as fiber-chip couplers, microring resonators, multimode interference-based 3-dB power splitters, and subwavelength grating metamaterial waveguides, were fabricated and characterized and are reported. The prototyping platform features a 400-nm-thick layer of silicon nitride grown via low-pressure chemical vapour deposition onto 4” silicon thermal oxide wafers and uses direct-write electron beam lithography to define single mode waveguide structures that exhibit losses of |
| نوع الوثيقة: | article |
| وصف الملف: | electronic resource |
| اللغة: | English |
| تدمد: | 1943-0655 |
| Relation: | https://ieeexplore.ieee.org/document/10758930/; https://doaj.org/toc/1943-0655 |
| DOI: | 10.1109/JPHOT.2024.3503287 |
| URL الوصول: | https://doaj.org/article/f9ffac6a05fb4b6a96b390efe5be5e88 |
| رقم الانضمام: | edsdoj.f9ffac6a05fb4b6a96b390efe5be5e88 |
| قاعدة البيانات: | Directory of Open Access Journals |
Full Text Finder | تدمد: | 19430655 |
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| DOI: | 10.1109/JPHOT.2024.3503287 |