التفاصيل البيبلوغرافية
| العنوان: |
Characterizing Ferroelectric Properties of Hf0.5Zr0.5O2 From Deep-Cryogenic Temperature (4 K) to 400 K |
| المؤلفون: |
Jae Hur, Yuan-Chun Luo, Zheng Wang, Sarah Lombardo, Asif Islam Khan, Shimeng Yu |
| المصدر: |
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 7, Iss 2, Pp 168-174 (2021) |
| بيانات النشر: |
IEEE, 2021. |
| سنة النشر: |
2021 |
| المجموعة: |
LCC:Computer engineering. Computer hardware |
| مصطلحات موضوعية: |
Cryogenic temperature, device reliability, ferroelectric, ferroelectric field-effect transistor (FeFET), ferroelectric random access memory (FeRAM), Hf0.5Zr0.5O2 (HZO), Computer engineering. Computer hardware, TK7885-7895 |
| الوصف: |
Ferroelectric Hf0.5Zr0.5O2 (HZO) thin film has obtained considerable attention for emerging non-volatile memory (eNVM) and synaptic device applications. To our best knowledge, the polarization switching of HZO has not been comprehensively investigated in wide-ranging temperatures from deep-cryogenic 4 K to elevated temperature 400 K within the same set of test structures. In this work, we experimentally characterize the reliability effects such as endurance (wake-up, fatigue, and breakdown), retention (including imprint), and small-signal response of the HZO capacitor from the lowest temperature reported (4 K) to the elevated temperature (400 K). We demonstrate one of the highest endurance cycles $ > 3.5\times 10^{10}$ among reported TiN/HZO/TiN capacitors with negligible wake-up/fatigue effects or retention degradation, all obtained at 4 K. Based on the experimental results, we further simulated ferroelectric random access memory (FeRAM) and ferroelectric field-effect transistor (FeFET) to evaluate their potentials as cryogenic memories. |
| نوع الوثيقة: |
article |
| وصف الملف: |
electronic resource |
| اللغة: |
English |
| تدمد: |
2329-9231 |
| Relation: |
https://ieeexplore.ieee.org/document/9627158/; https://doaj.org/toc/2329-9231 |
| DOI: |
10.1109/JXCDC.2021.3130783 |
| URL الوصول: |
https://doaj.org/article/eaf1046bc0d94e6a985458b021b89d78 |
| رقم الانضمام: |
edsdoj.f1046bc0d94e6a985458b021b89d78 |
| قاعدة البيانات: |
Directory of Open Access Journals |