التفاصيل البيبلوغرافية
| العنوان: |
Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium |
| المؤلفون: |
Zhenzhen Tian, Xiaoming Yuan, Ziran Zhang, Wuao Jia, Jian Zhou, Han Huang, Jianqiao Meng, Jun He, Yong Du |
| المصدر: |
Nanoscale Research Letters, Vol 16, Iss 1, Pp 1-9 (2021) |
| بيانات النشر: |
SpringerOpen, 2021. |
| سنة النشر: |
2021 |
| المجموعة: |
LCC:Materials of engineering and construction. Mechanics of materials |
| مصطلحات موضوعية: |
Nanowire growth, GaP, InP, Chemical vapor deposition, CALPHAD, Materials of engineering and construction. Mechanics of materials, TA401-492 |
| الوصف: |
Abstract Growth of high-quality III–V nanowires at a low cost for optoelectronic and electronic applications is a long-term pursuit of research. Still, controlled synthesis of III–V nanowires using chemical vapor deposition method is challenge and lack theory guidance. Here, we show the growth of InP and GaP nanowires in a large area with a high density using a vacuum chemical vapor deposition method. It is revealed that high growth temperature is required to avoid oxide formation and increase the crystal purity of InP nanowires. Introduction of a small amount of Ga into the reactor leads to the formation of GaP nanowires instead of ternary InGaP nanowires. Thermodynamic calculation within the calculation of phase diagrams (CALPHAD) approach is applied to explain this novel growth phenomenon. Composition and driving force calculations of the solidification process demonstrate that only 1 at.% of Ga in the catalyst is enough to tune the nanowire formation from InP to GaP, since GaP nucleation shows a much larger driving force. The combined thermodynamic studies together with III–V nanowire growth studies provide an excellent example to guide the nanowire growth. |
| نوع الوثيقة: |
article |
| وصف الملف: |
electronic resource |
| اللغة: |
English |
| تدمد: |
1556-276X |
| Relation: |
https://doaj.org/toc/1556-276X |
| DOI: |
10.1186/s11671-021-03505-2 |
| URL الوصول: |
https://doaj.org/article/cb971f6f43d74993a9aae2a21ab47c67 |
| رقم الانضمام: |
edsdoj.b971f6f43d74993a9aae2a21ab47c67 |
| قاعدة البيانات: |
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