Academic Journal

Modeling, Parameters and Synaptic Plasticity Analysis of Lateral‐Ionic‐Gated Graphene Synaptic FETs

التفاصيل البيبلوغرافية
العنوان: Modeling, Parameters and Synaptic Plasticity Analysis of Lateral‐Ionic‐Gated Graphene Synaptic FETs
المؤلفون: Xiaoying He, Bowen Cao, Minghao Xu, Kun Wang, Lan Rao
المصدر: Advanced Electronic Materials, Vol 10, Iss 9, Pp n/a-n/a (2024)
بيانات النشر: Wiley-VCH, 2024.
سنة النشر: 2024
المجموعة: LCC:Electric apparatus and materials. Electric circuits. Electric networks
LCC:Physics
مصطلحات موضوعية: electric‐double‐layers, graphene, synaptic transistors, technology computer aided design modeling, time slicing technique, Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4, Physics, QC1-999
الوصف: Abstract Exploiting simulation modeling of graphene synaptic field‐effect transistors is extremely important for helping researchers to construct carbon‐based neuromorphic computing systems. Here, lateral‐ionic‐gated graphene synaptic FETs with different gate lengths are fabricated, and they are modeled by using basic physic models combined with the ions migration‐diffusion model and graphene material model. The feasibility and accuracy of the proposed modeling are validated by showing an excellent agreement between simulations and experimental results. The slicing technique of the modeling is proposed to analyze the influence of ionic concentration and diffusion coefficient on the ions movement to reveal their working mechanism. The effect of key parameters about gate length, ionic concentration, and diffusion coefficient on synaptic behavior such as short‐term plasticity, and long‐term plasticity is simulated and discussed. In addition, three kinds of spike‐timing‐dependent plasticity are obtained by the device modeling. This research opens up promising avenues for the development of artificial synapse modeling and paths to new opportunities for the construction of carbon‐based neuromorphic networks.
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: English
تدمد: 2199-160X
Relation: https://doaj.org/toc/2199-160X
DOI: 10.1002/aelm.202400047
URL الوصول: https://doaj.org/article/b048db4eab144d4e9c2c3beb95b17814
رقم الانضمام: edsdoj.b048db4eab144d4e9c2c3beb95b17814
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:2199160X
DOI:10.1002/aelm.202400047