التفاصيل البيبلوغرافية
| العنوان: |
Interfacial band parameters of ultrathin ALD-ZrO2 on Ga-polar GaN through XPS measurements |
| المؤلفون: |
Shuoyang Qiu, Jiarui Gong, Jie Zhou, Tien Khee Ng, Ranveer Singh, Moheb Sheikhi, Boon S. Ooi, Zhenqiang Ma |
| المصدر: |
AIP Advances, Vol 13, Iss 5, Pp 055110-055110-7 (2023) |
| بيانات النشر: |
AIP Publishing LLC, 2023. |
| سنة النشر: |
2023 |
| المجموعة: |
LCC:Physics |
| مصطلحات موضوعية: |
Physics, QC1-999 |
| الوصف: |
Recent demonstrations of grafted p-n junctions combining n-type GaN with p-type semiconductors have shown great potential in achieving lattice-mismatch epitaxy-like heterostructures. Ultrathin dielectrics deposited by atomic layer deposition (ALD) serve both as a double-sided surface passivation layer and a quantum tunneling layer. On the other hand, with excellent thermal, mechanical, and electrical properties, ZrO2 serves as a high-k gate dielectric material in multiple applications, which is also of potential interest to applications in grafted GaN-based heterostructures. In this sense, understanding the interfacial band parameters of ultrathin ALD-ZrO2 is of great importance. In this work, the band-bending of Ga-polar GaN with ultrathin ALD-ZrO2 was studied by x-ray photoelectron spectroscopy (XPS). This study demonstrated that ZrO2 can effectively suppress upward band-bending from 0.88 to 0.48 eV at five deposition cycles. The bandgap values of ALD-ZrO2 at different thicknesses were also carefully studied. |
| نوع الوثيقة: |
article |
| وصف الملف: |
electronic resource |
| اللغة: |
English |
| تدمد: |
2158-3226 |
| Relation: |
https://doaj.org/toc/2158-3226 |
| DOI: |
10.1063/5.0145286 |
| URL الوصول: |
https://doaj.org/article/984aa804533e49d48c82693fd3320b71 |
| رقم الانضمام: |
edsdoj.984aa804533e49d48c82693fd3320b71 |
| قاعدة البيانات: |
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