التفاصيل البيبلوغرافية
| العنوان: |
SPECTRUM OF RAMAN SCATTERING HETEROSTRUCTURES A3B5/Si (100) OBTAINED BY PULSED LASER DEPOSITION |
| المؤلفون: |
Oleg Devitsky, Igor Sysoev, Vitaly Batishchev, Victor Vasiliev, Ivan Kasyanov |
| المصدر: |
Вестник Северо-Кавказского федерального университета, Vol 0, Iss 6, Pp 12-16 (2022) |
| بيانات النشر: |
North Caucasus Federal University, 2022. |
| سنة النشر: |
2022 |
| المجموعة: |
LCC:Economics as a science |
| مصطلحات موضوعية: |
гетероструктуры соединений aß5, импульсное лазерное напыление, комбинационное рассеяние света, alga- as /si, alga-xpyas1 /si, gap, солнечные элементы, eterostructures a3b5 compounds, pulsed laser deposition, raman scattering, alxga1-xas / si, alxga1-xpyas1-y / si, agap, asolar cells, Economics as a science, HB71-74 |
| الوصف: |
He article discusses the problem of determining the Raman spectra of the lighttion in the hetrostructure AlGa, As, P / Si AlGa, As / Si. x 1-x 1-y y x 1-x The aim is to study the Raman spectra of hetero-structures of compounds AlGa- As- P / Si AlGa- As / Si, obtained by pulsed laser deposition (PLD). For heterostructures grown on silicon substrates with the (100), shifts the opticalphonon frequencies obtained at T = 300 °C is minimal and is 10 cm-1. From this it can be concluded that the synthesis temperature decrease heterostructure type AlGa As1 P / Si up to T = 300 °C produces samples with low value of stress level. It is shown that Meto-house pulsed laser deposition on Alg3Gag7As /Si example, can be produced hetero-structures Aß5 / Si of sufficient quality. |
| نوع الوثيقة: |
article |
| وصف الملف: |
electronic resource |
| اللغة: |
Russian |
| تدمد: |
2307-907X |
| Relation: |
https://vestnikskfu.elpub.ru/jour/article/view/1130; https://doaj.org/toc/2307-907X |
| URL الوصول: |
https://doaj.org/article/8fb0cafdb2ce4dd9971cb48244488a21 |
| رقم الانضمام: |
edsdoj.8fb0cafdb2ce4dd9971cb48244488a21 |
| قاعدة البيانات: |
Directory of Open Access Journals |