التفاصيل البيبلوغرافية
| العنوان: |
Double Node Upset Immune RHBD-14T SRAM Cell for Space and Satellite Applications |
| المؤلفون: |
Pavan Kumar Mukku, Rohit Lorenzo |
| المصدر: |
IEEE Access, Vol 11, Pp 96256-96271 (2023) |
| بيانات النشر: |
IEEE, 2023. |
| سنة النشر: |
2023 |
| المجموعة: |
LCC:Electrical engineering. Electronics. Nuclear engineering |
| مصطلحات موضوعية: |
Critical charge, double node upset (DNU), ion track, PVT analysis, radiation hardening, sensitive node, Electrical engineering. Electronics. Nuclear engineering, TK1-9971 |
| الوصف: |
Deep sub-micron memory devices play a crucial role in space electronic applications due to their susceptibility to single-event upset and double-node upset types of soft errors. When a charged particle from space hit a scaled memory circuit, the critical charge of sensitive storage nodes drops, and a node upset happens across the storage nodes. This paper describes the soft error immune RHBD-14T SRAM cell (SEI-14T) for space and satellite applications. The SEI-14T memory cell consists of two latch circuits coupled in a self-recovering, state-restoring feedback manner. In addition, SEI-14T memory cell mitigate single event upset (SEU) in all sensitive nodes and a portion of double node upset. By considering the sensitive node area separation approach, the remaining upset pairs were recovered. To show the relative performance of the SEI-14T, the state-of-the-art of other radiation-resistant memory cells, such as the Quatro-10T, RHM-12T, RHD-12T, RSP-14T, RHPD-12T, RH-14T, EDP-12T, and QCCS-12T are considered. Compared to all other mentioned memory cells, SEI-14T has superior write stability, and greater read stability than all other memory cells. Furthermore, at 0.8 V supply voltage, SEI-14T minimizes 23%, 12.28% and 20.82% of read access time, write access time and static power consumption respectively compared to existing memory cells. Moreover, the critical charge of SEI-14T was $8.85\times / 6.56\times / 3.4\times / 5.75\times / 2.54\times / 2.47\times / 1.81\times / 1.63\times / 1.44\times $ times larger than 6T-SRAM/ Quatro-10T/ RHM-12T/ RHD-12T/ RSP-14T/ RHPD-12T/ RH-14T/ EDP-12T/ QCCS-12T memory cells. |
| نوع الوثيقة: |
article |
| وصف الملف: |
electronic resource |
| اللغة: |
English |
| تدمد: |
2169-3536 |
| Relation: |
https://ieeexplore.ieee.org/document/10235989/; https://doaj.org/toc/2169-3536 |
| DOI: |
10.1109/ACCESS.2023.3310570 |
| URL الوصول: |
https://doaj.org/article/8e2ab40adb8449e4acdc9c83bb8a0376 |
| رقم الانضمام: |
edsdoj.8e2ab40adb8449e4acdc9c83bb8a0376 |
| قاعدة البيانات: |
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