التفاصيل البيبلوغرافية
| العنوان: |
Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture |
| المؤلفون: |
Hongliang Lu, Bin Lu, Yuming Zhang, Yimen Zhang, Zhijun Lv |
| المصدر: |
Nanomaterials, Vol 9, Iss 2, p 181 (2019) |
| بيانات النشر: |
MDPI AG, 2019. |
| سنة النشر: |
2019 |
| المجموعة: |
LCC:Chemistry |
| مصطلحات موضوعية: |
TFET, BTBT, InAs/Si, heterojunction, staggered-bandgap, source-pocket, 2D Poisson equations, parabolic approximation, Kane’s model, current model, Chemistry, QD1-999 |
| الوصف: |
The practical use of tunnel field-effect transistors is retarded by the low on-state current. In this paper, the energy-band engineering of InAs/Si heterojunction and novel device structure of source-pocket concept are combined in a single tunnel field-effect transistor to extensively boost the device performance. The proposed device shows improved tunnel on-state current and subthreshold swing. In addition, analytical potential model for the proposed device is developed and tunneling current is also calculated. Good agreement of the modeled results with numerical simulations verifies the validation of our model. With significantly reduced simulation time while acceptable accuracy, the model would be helpful for the further investigation of TFET-based circuit simulations. |
| نوع الوثيقة: |
article |
| وصف الملف: |
electronic resource |
| اللغة: |
English |
| تدمد: |
2079-4991 |
| Relation: |
https://www.mdpi.com/2079-4991/9/2/181; https://doaj.org/toc/2079-4991 |
| DOI: |
10.3390/nano9020181 |
| URL الوصول: |
https://doaj.org/article/884a34832f314243bb6e6a7763446c07 |
| رقم الانضمام: |
edsdoj.884a34832f314243bb6e6a7763446c07 |
| قاعدة البيانات: |
Directory of Open Access Journals |
Full Text Finder