التفاصيل البيبلوغرافية
العنوان: |
SCR-Based ESD Protection Using a Penta-Well for 5 V Applications |
المؤلفون: |
Bo-Bae Song, Kyoung-Il Do, Yong-Seo Koo |
المصدر: |
IEEE Journal of the Electron Devices Society, Vol 6, Pp 691-695 (2018) |
بيانات النشر: |
IEEE, 2018. |
سنة النشر: |
2018 |
المجموعة: |
LCC:Electrical engineering. Electronics. Nuclear engineering |
مصطلحات موضوعية: |
Silicon controlled rectifier (SCR), penta-well, holding voltage, current driving capability, Electrical engineering. Electronics. Nuclear engineering, TK1-9971 |
الوصف: |
This paper proposes a new structure of silicon controlled rectifier (SCR)-based ESD protection circuit using a penta-well for ESD protection in 5 V applications. The proposed circuit exhibits higher holding voltage and current-driving capability than low Ron SCR (LRSCR) ESD protection circuits. The existing LRSCR ESD protection circuit and the proposed ESD protection circuit were fabricated using the 0.18 μm BCD process. The electrical and latch-up characteristics were compared and analyzed using transmission line pulse measurement and a transient-induced latch-up test. |
نوع الوثيقة: |
article |
وصف الملف: |
electronic resource |
اللغة: |
English |
تدمد: |
2168-6734 |
Relation: |
https://ieeexplore.ieee.org/document/8355253/; https://doaj.org/toc/2168-6734 |
DOI: |
10.1109/JEDS.2018.2817636 |
URL الوصول: |
https://doaj.org/article/79cc431377ad403fa58e73d7a037a1c0 |
رقم الانضمام: |
edsdoj.79cc431377ad403fa58e73d7a037a1c0 |
قاعدة البيانات: |
Directory of Open Access Journals |