Academic Journal
Interface analysis of oxide free MoS2 films fabricated by solution process
| العنوان: | Interface analysis of oxide free MoS2 films fabricated by solution process |
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| المؤلفون: | Md Iftekharul Alam, Rikiya Sumichika, Junichi Tsuchimoto, Tadahiro Komeda, Akinobu Teramoto |
| المصدر: | Scientific Reports, Vol 14, Iss 1, Pp 1-13 (2024) |
| بيانات النشر: | Nature Portfolio, 2024. |
| سنة النشر: | 2024 |
| المجموعة: | LCC:Medicine LCC:Science |
| مصطلحات موضوعية: | Transitional metal dichalcogenides, MoS2, Oxide-free surface, Thermal desorption spectroscopy, Interface analysis, Medicine, Science |
| الوصف: | Abstract We report a solution-based approach for the synthesis of oxidation-free MoS2 films, focusing on interface analysis. Through a sulfurization-free solution process and single-step annealing, the oxidation-free MoS2 film is successfully prepared on Si3N4 surfaces, showing improved uniformity with a surface roughness below 0.5 nm and a thickness of 4 nm at a precursor solution concentration of 30 mM, annealed between 700 and 800ºC. The MoS2 films exhibit a hexagonal lattice structure with crystallographic orientations of (1 1 0 0) and (1 2 1 0) with lattice spacings of 0.27 nm and 0.16 nm respectively. Interfacial analysis by X-ray photoelectron spectroscopy (XPS) on SiO2 reveals migration of oxygen species as evidenced by a shift in the Si 2p spectrum at binding energies between 102.6 eV and 102.8 eV. MoS2 films on Si3N4 show a complex Si 2p peak evolution at binding energies between 100.9 and 101.8 eV, providing valuable insights into the synthesis of oxide-free MoS2 films for potential applications in advanced electronic devices. |
| نوع الوثيقة: | article |
| وصف الملف: | electronic resource |
| اللغة: | English |
| تدمد: | 2045-2322 |
| Relation: | https://doaj.org/toc/2045-2322 |
| DOI: | 10.1038/s41598-024-78229-1 |
| URL الوصول: | https://doaj.org/article/766235ed461f47b3bce90753dffde780 |
| رقم الانضمام: | edsdoj.766235ed461f47b3bce90753dffde780 |
| قاعدة البيانات: | Directory of Open Access Journals |
Full Text Finder | تدمد: | 20452322 |
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| DOI: | 10.1038/s41598-024-78229-1 |