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Photoluminescence and Raman Spectroscopy Studies of Carbon Nitride Films

التفاصيل البيبلوغرافية
العنوان: Photoluminescence and Raman Spectroscopy Studies of Carbon Nitride Films
المؤلفون: J. Hernández-Torres, A. Gutierrez-Franco, P. G. González, L. García-González, T. Hernandez-Quiroz, L. Zamora-Peredo, V. H. Méndez-García, A. Cisneros-de la Rosa
المصدر: Journal of Spectroscopy, Vol 2016 (2016)
بيانات النشر: Hindawi Limited, 2016.
سنة النشر: 2016
المجموعة: LCC:Optics. Light
مصطلحات موضوعية: Optics. Light, QC350-467
الوصف: Amorphous carbon nitride films with N/C ratios ranging from 2.24 to 3.26 were deposited by reactive sputtering at room temperature on corning glass, silicon, and quartz as substrates. The average chemical composition of the films was obtained from the semiquantitative energy dispersive spectroscopy analysis. Photoluminescence measurements were performed to determine the optical band gap of the films. The photoluminescence spectra displayed two peaks: one associated with the substrate and the other associated with CNx films located at ≈2.13±0.02 eV. Results show an increase in the optical band gap from 2.11 to 2.15 eV associated with the increase in the N/C ratio. Raman spectroscopy measurements showed a dominant D band. ID/IG ratio reaches a maximum value for N/C ≈ 3.03 when the optical band gap is 2.12 eV. Features observed by the photoluminescence and Raman studies have been associated with the increase in the carbon sp2/sp3 ratio due to presence of high nitrogen content.
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: English
تدمد: 2314-4920
2314-4939
Relation: https://doaj.org/toc/2314-4920; https://doaj.org/toc/2314-4939
DOI: 10.1155/2016/5810592
URL الوصول: https://doaj.org/article/c748f4e5bfe544518b2697b7084890b8
رقم الانضمام: edsdoj.748f4e5bfe544518b2697b7084890b8
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:23144920
23144939
DOI:10.1155/2016/5810592