Academic Journal
Development of a novel self-healing Zn(II)-metallohydrogel with wide bandgap semiconducting properties for non-volatile memory device application
| العنوان: | Development of a novel self-healing Zn(II)-metallohydrogel with wide bandgap semiconducting properties for non-volatile memory device application |
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| المؤلفون: | Arpita Roy, Subhendu Dhibar, Kripasindhu Karmakar, Subham Bhattacharjee, Bidyut Saha, Soumya Jyoti Ray |
| المصدر: | Scientific Reports, Vol 14, Iss 1, Pp 1-17 (2024) |
| بيانات النشر: | Nature Portfolio, 2024. |
| سنة النشر: | 2024 |
| المجموعة: | LCC:Medicine LCC:Science |
| مصطلحات موضوعية: | Zn(II)-metallohydrogel, LMWG, Self-healing, Injectable property, Microstructure, Semiconducting device, Medicine, Science |
| الوصف: | Abstract A rapid and effective strategy has been devised for the swift development of a Zn(II)-ion-based supramolecular metallohydrogel, termed Zn@PEH, using pentaethylenehexamine as a low molecular weight gelator. This process occurs in an aqueous medium at room temperature and atmospheric pressure. The mechanical strength of the synthesized Zn@PEH metallohydrogel has been assessed through rheological analysis, considering angular frequency and oscillator stress dependencies. Notably, the Zn@PEH metallohydrogel exhibits exceptional self-healing abilities and can bear substantial loads, which have been characterized through thixotropic analysis. Additionally, this metallohydrogel displays injectable properties. The structural arrangement resembling pebbles within the hierarchical network of the supramolecular Zn@PEH metallohydrogel has been explored using FESEM and TEM measurements. EDX elemental mapping has confirmed the primary chemical constituents of the metallohydrogel. The formation mechanism of the metallohydrogel has been analyzed via FT-IR spectroscopy. Furthermore, zinc(II) metallohydrogel (Zn@PEH)-based Schottky diode structure has been fabricated in a lateral metal–semiconductor-metal configuration and it’s charge transport behavior has also been studied. Notably, the zinc(II) metallohydrogel-based resistive random access memory (RRAM) device (Zn@PEH) demonstrates bipolar resistive switching behavior at room temperature. This RRAM device showcases remarkable switching endurance over 1000 consecutive cycles and a high ON/OFF ratio of approximately 270. Further, 2 × 2 crossbar array of the RRAM devices were designed to demonstrate OR and NOT logic circuit operations, which can be extended for performing higher order computing operations. These structures hold promise for applications in non-volatile memory design, neuromorphic and in-memory computing, flexible electronics, and optoelectronic devices due to their straightforward fabrication process, robust resistive switching behavior, and overall system stability. |
| نوع الوثيقة: | article |
| وصف الملف: | electronic resource |
| اللغة: | English |
| تدمد: | 2045-2322 |
| Relation: | https://doaj.org/toc/2045-2322 |
| DOI: | 10.1038/s41598-024-61870-1 |
| URL الوصول: | https://doaj.org/article/73e6b109534f4dde98f44b75c9e5b0da |
| رقم الانضمام: | edsdoj.73e6b109534f4dde98f44b75c9e5b0da |
| قاعدة البيانات: | Directory of Open Access Journals |
Full Text Finder | تدمد: | 20452322 |
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| DOI: | 10.1038/s41598-024-61870-1 |