التفاصيل البيبلوغرافية
| العنوان: |
Subthreshold Operation of Photodiode-Gated Transistors Enabling High-Gain Optical Sensing and Imaging Applications |
| المؤلفون: |
Kai Wang, Yihong Qi, Yunfeng Hu, Yangbing Xu, Yitong Xu, Jinming Liu, Xianda Zhou |
| المصدر: |
IEEE Journal of the Electron Devices Society, Vol 8, Pp 1236-1241 (2020) |
| بيانات النشر: |
IEEE, 2020. |
| سنة النشر: |
2020 |
| المجموعة: |
LCC:Electrical engineering. Electronics. Nuclear engineering |
| مصطلحات موضوعية: |
High gain, photodiode-gated transistors, active pixel sensor, subthreshold operation, Electrical engineering. Electronics. Nuclear engineering, TK1-9971 |
| الوصف: |
In optical sensors and imagers, high gain that leads to high sensitivity and high signal to noise ratio (SNR) is often desirable. One popular approach is avalanche photomultiplication initiated by impact ionization in an avalanche photodiode or similar devices and the other approach is active pixel sensor (APS) with in-pixel amplifier. However, the former requires high electric field which induces high shot noise and the latter needs a multiple-transistor pixel circuit which compromises the fill factor and consequently, reduces the SNR. This work proposes and summarizes our recent efforts taken to achieve high gain optical sensors through subthreshold operation of photodiode-gated transistors. |
| نوع الوثيقة: |
article |
| وصف الملف: |
electronic resource |
| اللغة: |
English |
| تدمد: |
2168-6734 |
| Relation: |
https://ieeexplore.ieee.org/document/9187938/; https://doaj.org/toc/2168-6734 |
| DOI: |
10.1109/JEDS.2020.3022711 |
| URL الوصول: |
https://doaj.org/article/e73681aabc5548718e06fc95adb109f6 |
| رقم الانضمام: |
edsdoj.73681aabc5548718e06fc95adb109f6 |
| قاعدة البيانات: |
Directory of Open Access Journals |