Academic Journal
Vertical oxide thin-film transistor with interfacial oxidation
| العنوان: | Vertical oxide thin-film transistor with interfacial oxidation |
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| المؤلفون: | Yeong Jo Baek, In Hye Kang, Sang Ho Hwang, Ye Lin Han, Min Su Kang, Seok Jun Kang, Seo Gwon Kim, Jae Geun Woo, Eun Seong Yu, Byung Seong Bae |
| المصدر: | Scientific Reports, Vol 12, Iss 1, Pp 1-8 (2022) |
| بيانات النشر: | Nature Portfolio, 2022. |
| سنة النشر: | 2022 |
| المجموعة: | LCC:Medicine LCC:Science |
| مصطلحات موضوعية: | Medicine, Science |
| الوصف: | Abstract A vertical oxide thin-film transistor was developed with interfacial oxidation for low voltage operation. The gate metal was used as a spacer for the definition of the transistor’s channel as well as the gate electrode. After definition of the vertical side wall, an IGZO (In-Ga-Zn Oxide) layer was deposited, followed by the interfacial oxidation to form a thin gate insulator. Ta was used for the gate material due to the low Gibbs free energy and high dielectric constant of tantalum oxide. A 15 nm tantalum oxide layer was obtained by the interfacial oxidation of Ta at 400 °C under oxygen atmosphere. The thin gate oxide made it possible to operate the transistor under 1 V. The low operation voltage enables low power consumption, which is essential for mobile application. |
| نوع الوثيقة: | article |
| وصف الملف: | electronic resource |
| اللغة: | English |
| تدمد: | 2045-2322 |
| Relation: | https://doaj.org/toc/2045-2322 |
| DOI: | 10.1038/s41598-022-07052-3 |
| URL الوصول: | https://doaj.org/article/6f7df80b54b44a8f92de897acee23ced |
| رقم الانضمام: | edsdoj.6f7df80b54b44a8f92de897acee23ced |
| قاعدة البيانات: | Directory of Open Access Journals |
Full Text Finder | تدمد: | 20452322 |
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| DOI: | 10.1038/s41598-022-07052-3 |