التفاصيل البيبلوغرافية
| العنوان: |
Monolithic arrays of silicon sensors |
| المؤلفون: |
Ian Harding, Wei Chen, Gabriele Giacomini, Anthony Kuczewski, Abdul K. Rumaiz, David Peter Siddons |
| المصدر: |
Frontiers in Physics, Vol 10 (2022) |
| بيانات النشر: |
Frontiers Media S.A., 2022. |
| سنة النشر: |
2022 |
| المجموعة: |
LCC:Physics |
| مصطلحات موضوعية: |
noise, silicon drift sensors, silicon radiation detectors, silicon strip sensors, silicon sensor, Physics, QC1-999 |
| الوصف: |
Monolithic arrays of silicon p-n junctions are commonly used to deliver spatial information on impinging radiation, with the advantages of low-noise and fast signal generation. Additionally, array geometries also allow for a segmentation of a large area into individual channels that can be read out in parallel, so that a high-event rate can be managed. To optimize the noise performance, however, some key points must be addressed to control the silicon/silicon oxide interface. Replacing the p-n junctions with silicon drift sensors avoids noise related to the interface states, at the expense of a more complicated process and slower signals. In this paper, some of the aspects needing consideration when engineering a monolithic array of silicon sensors are reviewed. |
| نوع الوثيقة: |
article |
| وصف الملف: |
electronic resource |
| اللغة: |
English |
| تدمد: |
2296-424X |
| Relation: |
https://www.frontiersin.org/articles/10.3389/fphy.2022.927776/full; https://doaj.org/toc/2296-424X |
| DOI: |
10.3389/fphy.2022.927776 |
| URL الوصول: |
https://doaj.org/article/a5510ac2279844419aff2fea3ef8070c |
| رقم الانضمام: |
edsdoj.5510ac2279844419aff2fea3ef8070c |
| قاعدة البيانات: |
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