Academic Journal

A Study of the Variability in Contact Resistive Random Access Memory by Stochastic Vacancy Model

التفاصيل البيبلوغرافية
العنوان: A Study of the Variability in Contact Resistive Random Access Memory by Stochastic Vacancy Model
المؤلفون: Yun-Feng Kao, Wei Cheng Zhuang, Chrong-Jung Lin, Ya-Chin King
المصدر: Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-10 (2018)
بيانات النشر: SpringerOpen, 2018.
سنة النشر: 2018
المجموعة: LCC:Materials of engineering and construction. Mechanics of materials
مصطلحات موضوعية: RRAM, Variability, Stochastic model, Monte Carlo simulation, Trap-assisted tunneling, Materials of engineering and construction. Mechanics of materials, TA401-492
الوصف: Abstract Variability in resistive random access memory cell has been one of the critical challenges for the development of high-density RRAM arrays. While the sources of variability during resistive switching vary for different transition metal oxide films, the stochastic oxygen vacancy generation/recombination is generally believed to be the dominant cause. Through analyzing experimental data, a stochastic model which links the subsequent switching characteristics with its initial states of contact RRAM cells is established. By combining a conduction network model and the trap-assisted tunneling mechanism, the impacts of concentration and distribution of intrinsic oxygen vacancies in RRAM dielectric film are demonstrated with Monte Carlo Simulation. The measurement data on contact RRAM arrays agree well with characteristics projected by the model based on the presence of randomly distributed intrinsic vacancies. A strong correlation between forming characteristics and initial states is verified, which links forming behaviors to preforming oxygen vacancies. This study provides a comprehensive understanding of variability sources in contact RRAM devices and a reset training scheme to reduce the variability behavior in the subsequent RRAM states.
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: English
تدمد: 1931-7573
1556-276X
Relation: http://link.springer.com/article/10.1186/s11671-018-2619-x; https://doaj.org/toc/1931-7573; https://doaj.org/toc/1556-276X
DOI: 10.1186/s11671-018-2619-x
URL الوصول: https://doaj.org/article/4ed9c5a0d4984ceaa86e2f0836e75173
رقم الانضمام: edsdoj.4ed9c5a0d4984ceaa86e2f0836e75173
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:19317573
1556276X
DOI:10.1186/s11671-018-2619-x