Academic Journal
Effect of Inductively Coupled Plasma Etching Parameters on n-Al0.5Ga0.5N Ohmic Contact
| العنوان: | Effect of Inductively Coupled Plasma Etching Parameters on n-Al0.5Ga0.5N Ohmic Contact |
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| المؤلفون: | Shanshan Yang, Meixin Feng, Yuzhen Liu, Wenjun Xiong, Biao Deng, Yingnan Huang, Chuanjie Li, Qiming Xu, Yanwei Shen, Qian Sun, Hui Yang |
| المصدر: | IEEE Photonics Journal, Vol 16, Iss 5, Pp 1-5 (2024) |
| بيانات النشر: | IEEE, 2024. |
| سنة النشر: | 2024 |
| المجموعة: | LCC:Applied optics. Photonics LCC:Optics. Light |
| مصطلحات موضوعية: | N-AlGaN, ohmic contact, ICP etching, XPS, Applied optics. Photonics, TA1501-1820, Optics. Light, QC350-467 |
| الوصف: | High-Al-content n-AlGaN ohmic contact is very important for deep ultraviolet optoelectrical devices. However, it often suffers from the etching damages formed in inductively coupled plasma (ICP) etching. In this paper, the effects of ICP etching parameters on n-Al0.5Ga0.5N ohmic contact, including RF power, ICP power, and etching gas, were systematically investigated and analyzed by X-ray photoelectron spectroscopy and circular transmission line model. Finally, n-Al0.5Ga0.5N ohmic contact was achieved with a low specific contact resistivity of 8.7×10-4 Ω·cm2, and AlGaN-based UVC light-emitting diodes (LEDs) showed a low operation voltage of only 5.6 V at the injection current density of 16 A/cm2. |
| نوع الوثيقة: | article |
| وصف الملف: | electronic resource |
| اللغة: | English |
| تدمد: | 1943-0655 |
| Relation: | https://ieeexplore.ieee.org/document/10547402/; https://doaj.org/toc/1943-0655 |
| DOI: | 10.1109/JPHOT.2024.3408876 |
| URL الوصول: | https://doaj.org/article/49b164dd3b164480b12360c4e1aa190a |
| رقم الانضمام: | edsdoj.49b164dd3b164480b12360c4e1aa190a |
| قاعدة البيانات: | Directory of Open Access Journals |
Full Text Finder | تدمد: | 19430655 |
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| DOI: | 10.1109/JPHOT.2024.3408876 |